SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for low viltage applications such as automotive,
DC/DC converters and a load switch in battery powered applications
E
KMB060N60PA/FA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KMB060N60PA
A
O
C
F
G
B
Q
I
K
M
L
J
D
H
P
DIM MILLIMETERS
_
9.9 + 0.2
A
B
C
D
E
F
G
H
I
J
K
L
M
FEATURES
V
DSS
= 60V, I
D
= 60A
Drain-Source ON Resistance :
R
DS(ON)
=14m
(Max.) @V
GS
= 10V
15.95 MAX
1.3+0.1/-0.05
_
0.8 + 0.1
_
3.6 + 0.2
_
2.8 + 0.1
3.7
0.5+0.1/-0.05
1.5
_
13.08 + 0.3
1.46
_
1.4 + 0.1
_
1.27 + 0.1
_
2.54 + 0.2
_
4.5 + 0.2
_
2.4 + 0.2
_
9.2 + 0.2
MOSFET MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC
Drain Current
Pulsed (Note 1)
Drain-Source Diode Forward Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
I
DP
I
S
P
D
* 25
T
j
T
stg
SYMBOL
V
DSS
V
GSS
I
D
*
Unless otherwise noted)
RATING
KMB060N60PA KMB060N60FA
N
N
UNIT
V
V
1
2
3
N
O
1. GATE
2. DRAIN
3. SOURCE
60
25
60
240
60
150
-55
-55
175
175
51
60*
240*
P
Q
A
A
A
W
A
F
TO-220AB
KMB060N60FA
C
Thermal Characteristics
CHARACTERISTIC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
SYMBOL
R
thJA
R
thJC
1.0
RATING
KMB060N60PA KMB060N60FA
UNIT
/W
K
L
M
J
G
Note1) Pulse Test : Pulse width 10 S Duty cycle 1%
*Drain Current Iimited by maximum junction temperature
O
B
E
DIM
MILLIMETERS
R
62.5
2.9
D
/W
N
N
H
1
2
3
Equivalent Circuit
D
1. GATE
2. DRAIN
3. SOURCE
Q
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
_
10.16
+
0.2
_
15.87
+
0.2
_
2.54
+
0.2
_
0.8
+
0.1
_
3.18
+
0.1
_
3.3
+
0.1
_
12.57
+
0.2
_
0.1
0.5
+
_
13.0
+
0.5
_
3.23
+
0.1
1.47 MAX
1.47 MAX
_
2.54
+
0.2
_
6.68
+
0.2
_
4.7
+
0.2
_
2.76
+
0.2
TO-220IS (1)
G
S
2008. 1. 4
Revision No : 4
1/7
KMB060N60PA/FA
MOSFET Electrical Characteristics (Ta=25
CHARACTERISTIC
Unless otherwise noted)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Drain-Source ON Resistance
Forward Transconductance
BV
DSS
I
DSS
I
GSS
V
th
R
DS(ON)
g
FS
I
D
=250 A, V
GS
=0V
V
DS
=60V, V
GS
=0V,
V
GS
= 15V, V
DS
=0V
V
DS
=V
GS
, I
D
=250 A
V
GS
=10V, I
D
=30A
V
DS
=15V, I
D
=30A
60
-
-
2.0
-
-
-
-
-
-
11.5
20
-
1
100
4.0
14
-
V
A
nA
V
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Note 1) Pulse Test : Pulse width
10 s, Duty Cycle
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
1%.
V
DD
= 30V, I
D
=30A, R
G
= 25
V
DS
= 48V, V
GS
= 4.5V,
I
D
=30A
(Note1,2)
V
DS
=25V, V
GS
=0V, f=1.0MHz
-
-
-
-
-
-
-
-
-
-
2000
360
125
70
15
20
35
220
55
30
-
-
-
-
-
-
-
-
ns
-
-
nC
pF
Note 2) Essentially Independent of Operating Temperature.
DIODE Electrical Characteristics (Ta=25
CHARACTERISTIC
Diode Forward Voltage
Reverse Recovery Time
Unless otherwise noted)
SYMBOL
V
SD
T
rr
TEST CONDITION
I
SD
=60A, V
GS
=0V
V
GS
=0V, I
S
=60A, dIF/dt=100A/ s
MIN.
-
-
TYP.
-
110
MAX.
1.5
-
UNIT
V
Marking
1
KMB
1
060N60P
A
701
2
KMB
060N60F
A
713
2
1
PRODUCT NAME
2
LOT NO
2008. 1. 4
Revision No : 4
2/7
KMB060N60PA/FA
Fig 1. I
D
- V
DS
180
150
120
80
40
0
0
2
4
6
8
10
Fig 2. R
DS(ON)
- I
D
Drain Source On Resistance R
DS(ON)
(Ω)
25
20
15
V
GS
=10V
Common Source
Tc=25 C
Pulse Test
V
GS
=5V
4V
3.5V
Common Source
Tc=25 C
Pulse Test
Drain Current I
D
(A)
4.5V
10
5
0
0
10
20
30
40
50
3V
2.5V
Drain - Source Voltage V
DS
(V)
Drain Current I
D
(A)
Fig 3. I
D
- V
GS
200
160
120
80
40
0
0
2
4
6
8
10
2.2
V
GS
= 10V
I
DS
= 30A
Fig 4. R
DS(ON)
- Tj
Normalized On Resistance
Drain Current I
D
(A)
1.8
1.4
1.0
0.6
0.2
-50
0
50
100
150
V
GS
=15V
Gate - Source Voltage V
GS
(V)
Junction Temperature Tj ( C)
Fig 5. Vth - Tj
1.4
1.2
1
0.8
V
DS
= V
GS
I
D
= 250µA
Fig 6. I
DR
- V
DSF
V
GS
= 0
250µs Pulse Test
Reverse Drain Current I
S
(A)
Normalized On Resistance
10
1
150 C
10
0
25 C
0.6
0.4
-50
0
50
100
150
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Junction Temperature Tj ( C)
Source - Drain Voltage V
SD
(V)
2008. 1. 4
Revision No : 4
3/7
KMB060N60PA/FA
Fig 7. Qg - V
DS
10
5000
Fig 8. C - V
DS
Gate - Source Voltage V
GS
(V)
f = 1MHz
V
GS
= 0V
Gate - Source Voltage V
GS
(V)
8
6
4
2
0
0
20
40
60
80
100
4000
3000
2000
1000
Coss
Ciss
Crss
0
0
10
20
30
40
50
Gate - Charge Qg (nC)
Drain - Source Voltage V
DS
(V)
Fig 9. Safe Operation Area
KMB060N60PA
100µs
Fig 10. Safe Operation Area
KMB060N60FA
100µs
Drain Current I
D
(A)
1ms
N)
S(O
Drain Current I
D
(A)
100
Li
ed
mit
100
Lim
ited
1ms
10ms
DC
10ms
DC
10
R
D
10
R
DS(
O
N)
1
1
0.1
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Drain - Source Voltage V
DS
(V)
Drain - Source Voltage V
DS
(V)
2008. 1. 4
Revision No : 4
4/7
KMB060N60PA/FA
Fig 11. R
th
of KMB060N60PA
Transient Thermal Impedance [ C / W]
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
0.01
0.01
Single Pulse
- Duty Factor, D= t
1
/t
2
- R
thJC
=
T
j(max)
- T
c
P
D
10
0
10
1
0.003
10
-5
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
Fig 12. R
th
of KMB060N60FA
Transient Thermal Impedance [ C / W]
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
0.01
0.01
- Duty Factor, D= t
1
/t
2
Single Pulse
- R
thJC
=
10
-3
10
-2
10
-1
T
j(max)
- T
c
P
D
10
0
10
1
0.003
10
-5
10
-4
Square Wave Pulse Duration (sec)
2008. 1. 4
Revision No : 4
5/7
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