SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for low voltage applications such as automotive,
DC/DC converters and a load switch in battery powered applications
E
A
KMB080N75PA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
O
C
F
G
B
Q
DIM MILLIMETERS
_
9.9 + 0.2
A
B
C
D
E
FEATURES
V
DSS
= 75V, I
D
= 80A
Drain-Source ON Resistance :
R
DS(ON)
=12m (Max.) @V
GS
= 10V
D
I
K
M
L
P
F
G
H
J
H
I
J
K
L
M
N
O
15.95 MAX
1.3+0.1/-0.05
_
0.8 + 0.1
_
3.6 + 0.2
_
2.8 + 0.1
3.7
0.5+0.1/-0.05
1.5
_
13.08 + 0.3
1.46
_
1.4 + 0.1
_
1.27 + 0.1
_
2.54 + 0.2
_
4.5 + 0.2
_
2.4 + 0.2
_
9.2 + 0.2
MOSFET MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC
Drain Current
Pulsed (Note 1)
Drain-Source Diode Forward Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Note1) Pulse Test : Pulse width
I
DP
I
S
Unless otherwise noted)
RATING
75
25
80
320
80
300
-55 175
-55 175
1%
UNIT
V
V
A
A
A
W
1
N
N
SYMBOL
V
DSS
V
GSS
I
D
*
2
3
1. GATE
2. DRAIN
3. SOURCE
P
Q
TO-220AB
P
D
* 25
T
j
T
stg
10 S Duty cycle
Thermal Characteristics
CHARACTERISTIC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
SYMBOL
R
thJA
R
thJC
RATING
62.5
0.5
UNIT
/W
/W
Equivalent Circuit
D
G
S
2007. 10. 31
Revision No : 2
1/6
KMB080N75PA
MOSFET Electrical Characteristics (Ta=25
CHARACTERISTIC
Unless otherwise noted)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Drain-Source ON Resistance
Forward Transconductance
BV
DSS
I
DSS
I
GSS
V
th
R
DS(ON)
g
FS
I
D
=250 A, V
GS
=0V
V
DS
=75V, V
GS
=0V,
V
GS
= 20V, V
DS
=0V
V
DS
=V
GS
, I
D
=250 A
V
GS
=10V, I
D
=40A
V
DS
=15V, I
D
=40A
75
-
-
2
-
-
-
-
-
-
10
20
-
10
100
4
12
-
V
A
nA
V
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Note 1) Pulse Test : Pulse width
10 s, Duty Cycle
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
1%.
V
DD
= 30.5V
I
D
=40A
R
G
=25
(Note1,2)
-
-
66
30
-
-
ns
V
DS
= 60V,
V
GS
= 10V,
I
D
=40A
(Note1,2)
V
DS
=25V, V
GS
=0V, f=1.0MHz
-
-
-
-
-
-
-
-
3700
730
240
117
27
47
25
25
-
-
-
-
-
nC
-
-
-
pF
Note 2) Essentially Independent of Operating Temperature.
DIODE Electrical Characteristics (Ta=25
CHARACTERISTIC
Diode Forward Voltage
Reverse Recovery Time
Unless otherwise noted)
SYMBOL
V
SD
T
rr
TEST CONDITION
I
SD
=80A, V
GS
=0V
V
GS
=0V, I
S
=80A, dIF/dt=100A/ s
MIN.
-
-
TYP.
-
132
MAX.
1.5
-
UNIT
V
Marking
1
KMB
080N75P
A
701
2
1
PRODUCT NAME
2
LOT NO
2007. 10. 31
Revision No : 2
2/6
KMB080N75PA
Fig 1. I
D
- V
DS
300
10V
Common Source
T
C
=25 C
Pulse Test
7V
Fig 2. R
DS(ON)
- I
D
10
Common Source
T
C
=25 C
Pulse Test
Drain Current I
D
(A)
240
180
120
60
9V
On - Resistance R
DS(ON)
(mΩ)
9.6
9.2
V
GS
= 10V
6V
8.8
8.4
8.0
V
GS
=5V
0
0
4
8
12
16
20
0
20
40
60
80
100
Drain - Source Voltage V
DS
(V)
Drain Current I
D
(A)
Fig 3. I
D
- V
GS
300
2.2
V
GS
= 10V
I
DS
= 40A
Fig 4. R
DS(ON)
- Tj
Normalized On Resistance
10
Drain Current I
D
(A)
240
180
120
60
0
T
C
=25 C
1.8
1.4
1.0
0.6
0.2
0
2
4
6
8
-50
0
50
100
150
Gate - Source Voltage V
GS
(V)
Junction Temperature Tj ( C)
Fig 5. Vth - Tj
1.1
1.0
0.9
0.8
0.7
V
DS
= V
GS
I
D
= 250µA
Fig 6. I
DR
- V
DSF
V
GS
= 0
250µs Pulse Test
Reverse Drain Current I
S
(A)
Normalized On Resistance
10
1
150 C
10
0
25 C
0.6
-50
0
50
100
150
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Junction Temperature Tj ( C)
Source - Drain Voltage V
SD
(V)
2007. 10. 31
Revision No : 2
3/6
KMB080N75PA
Fig 7. Qg - V
GS
Gate - Source Voltage V
GS
(V)
15
12
9
6
3
0
0
30
60
90
120
150
10000
Fig 8. C - V
DS
f=1MHz
V
GS
=0V
8000
Capacitance (pF)
6000
4000
2000
0
0
10
20
30
40
50
Ciss
Coss
Crss
Gate - Charge Qg (nC)
Drain - Source Voltage V
DS
(V)
Fig 9. Safe Operation Area
10
3
Drain Current ID (A)
10
2
R
DS
N
(O
lim
)
its
100µs
1ms
10ms
DC
10
1
10
0
10
-1 -1
10
10
0
10
1
10
2
10
3
Drain - Source Voltage V
DS
(V)
Fig 10. R
th
Normalized Transient Thermal Resistance
1
Duty=0.5
0.2
0.1
P
DM
t
1
t
2
0.1
0.05
0.02
0.01
- Duty Factor, D= t
1
/t
2
Single Pulse
- R
thJC
=
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
T
j(max)
- T
c
P
D
10
0
10
1
Square Wave Pulse Duration (sec)
2007. 10. 31
Revision No : 2
4/6
KMB080N75PA
- Gate Charge
VGS
-4.5V
I
D
Schottky
Diode
0.8 x V
DSS
I
D
1.0 mA
Q
V
DS
V
GS
Qgs
Qgd
Qg
- Resistive Load Switching
RL
t
on
0.5 x VDSS
V
DS
6Ω
V
DS
10V
V
GS
V
GS
90%
10%
t
d(on)
tr
t
off
t
d(off)
tf
- Single Pulsed Avalanche Energy
1
EAS=
LI
AS2
2
BV
DSS
BV
DSS
- V
DD
BV
DSS
L
I
AS
0.5 x VDSS
25Ω
V
DS
10 V
I
D
(t)
VGS
V
DD
V
DS
(t)
Time
tp
2007. 10. 31
Revision No : 2
5/6
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