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KS826S04_01

Description
SCHOTTKY BARRIER DIODE
File Size52KB,3 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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KS826S04_01 Overview

SCHOTTKY BARRIER DIODE

KS826S04
(5A)
SCHOTTKY BARRIER DIODE
6.5
±0.2
(40V / 5A )
Outline drawings, mm
1.5
—0.1
+0.2
2.3
±0.2
0.5
5
±0.2
5.5
±0.2
0.
.9
—0.1
4.6
+0.2
Features
Surface-mount device
Low V
F
Super high speed switching
High reliability by planer design
JEDEC
EIAJ
1. Gate
2, 4. Drain
3. Source
Connection diagram
Applications
High speed power switching
2
4
3
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
I
o
I
FSM
T
j
T
stg
tw=500ns, duty=
1/40
Square wave, duty=
1/2
Tc=110°C
Sine wave
10ms
Conditions
Rating
40
48
5.0
80
-40 to +150
-40 to +150
Unit
V
V
A
A
°C
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
V
FM
I
RRM
R
th(j-c)
Conditions
I
FM
=5.0A
V
R
=V
RRM
Junction to case
Max.
0.55
5.0
10
Unit
V
mA
°C/W
1.0
2.5
±0.5
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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