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MS868C12

Description
120 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size517KB,5 Pages
ManufacturerFUJI
Websitehttp://www.fujielectric.co.jp/eng/fdt/scd/
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MS868C12 Overview

120 V, SILICON, RECTIFIER DIODE

http://www.fujisemi.com
MS868C12
(120V, 30A)
Low IR Schottky Barrier Diode
Features
• Low IR
• Low V
F
• Center tap connection
FUJI Diode
Outline Drawings [mm]
TFP
Connection diagram
868C12
868C12
Applications
• High frequency operation
• DC-DC converters
• AC adapter
Maximum Ratings and Characteristics
Maximum ratings (at Ta=25˚C Unless otherwise specified)
Item
Repetitive peak reverse voltage
Average output current
Non-repetitive surge current **
Operating junction temperature
Storage temperature
*Out put current of center tap full wave connection.
**Rating per element
Symbols
V
RRM
I
O
I
FSM
T
j
T
stg
Conditions
Ratings
120
Units
V
A
A
˚C
˚C
Square wave duty =1/2
Tc =115˚C
Sine wave, 10ms 1shot
30 *
190
150
-40 to +150
Electrical characteristics (at Ta=25˚C Unless otherwise specified)
Item
Forward voltage***
Reverse current***
Thermal resistance
***Rating per element
Symbols
V
F
I
R
Rth(j-c)
Conditions
I
F
= 15 A
V
R
=V
RRM
Junction to case
Maximum
0.88
200
1.2
Units
V
µA
˚C/W
Mechanical characteristics
Item
Approximate mass
Conditions
Ratings
0.8
Units
g
1
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