2SK2105 datasheet, PDF - EEWORLD Datasheet

2SK2105: DescriptionPower Field-Effect Transistor, 2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size165KB，2 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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2SK2105 Overview

Power Field-Effect Transistor, 2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	2 A
Maximum drain current (ID)	2 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	20 W
Maximum power dissipation(Abs)	20 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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