SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and Power
Supply.
KMB054N40DB
N-Ch Trench MOSFET
A
C
K
D
L
B
FEATURES
V
DSS
=40V, I
D
=54A.
Low Drain-Source ON Resistance.
: R
DS(ON)
=8.5m (Max.) @ V
GS
=10V
: R
DS(ON)
=11m (Max.) @ V
GS
=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
H
G
F
F
J
E
N
M
DIM MILLIMETERS
_
A
6.60 + 0.20
_
6.10 + 0.20
B
_
5.34 + 0.30
C
_
D
0.70 + 0.20
_
E
2.70 + 0.15
_
2.30 + 0.10
F
0.96 MAX
G
0.90 MAX
H
_
1.80 + 0.20
J
_
2.30 + 0.10
K
_
0.50 + 0.10
L
_
M
0.50 + 0.10
0.70 MIN
N
1
2
3
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Unless otherwise Noted)
SYMBOL
V
DSS
V
GSS
N-Ch
40
20
54
A
100
100
45
W
3.1
150
-55 150
2.8
40
/W
/W
A
UNIT
V
V
DPAK (1)
Marking
Type Name
DC@T
C
=25
Pulsed
(Note1)
(Note2)
I
D
I
DP
I
S
Drain-Source-Diode Forward Current
Drain Power Dissipation
@T
C
=25
@Ta=25
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Case
(Note1)
(Note1)
(Note2)
P
D
T
j
T
stg
R
thJC
R
thJA
KMB
054N40
DB
Lot No
Thermal Resistance, Junction to Ambient (Note2)
Note 1) R
thJC
means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1
1 Pad of 2 oz copper.
PIN CONNECTION (TOP VIEW)
D
2
2
1
1
3
3
G
S
2008. 6. 10
Revision No : 0
1/5
KMB054N40DB
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
BV
DSS
I
DSS
I
GSS
V
th
V
GS
=0V, I
D
=250 A
V
GS
=0V, V
DS
=32V
V
GS
=
20V, V
DS
=0V
40
-
-
1
-
-
-
-
-
-
-
1.9
6.5
8.5
10.4
58
-
1
100
3
8.5
11
14
-
S
m
V
A
nA
V
)
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
SYMBOL
V
DS
=V
GS,
I
D
=250 A
V
GS
=10V, I
D
=14A
Drain-Source ON Resistance
R
DS(ON)*
V
GS
=4.5V, I
D
=11A
V
GS
=10V, I
D
=14A, T
j
=125
Forward Transconductance
Dynamic
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Ratings
Source-Drain Forward Voltage
Note>* Pulse Test : Pulse width <300
V
GS
=10V
V
GS
=5V
g
fs*
V
DS
=10V, I
D
=20A
C
iss
C
oss
C
rss
Q
g
*
Q
g
*
Q
gs
*
Q
gd
*
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
V
DD
=20V, V
GS
=10V
I
D
=1A, R
G
=6
V
DS
=20V, V
GS
=10V, I
D
=14A
V
DS
=20V, f=1MHz, V
GS
=0V
-
-
-
-
-
-
-
-
-
-
-
1280
250
125
25.4
13.8
5.7
5.4
19
16
60
14
-
-
-
-
-
nC
-
-
-
-
ns
-
-
pF
V
SDF
*
, Duty cycle < 2%
V
GS
=0V, I
S
=14A
-
0.8
1.2
V
2008. 6. 10
Revision No : 0
2/5
KMB054N40DB
Fig1. I
D
- V
DS
Drain Source On Resistance R
DS(ON)
(mΩ)
100
80
60
4.0V
V
GS
=10V
6.0V
Fig2. R
DS(ON)
-I
D
30
Ta=25
C
5.0V
4.5V
Drain Current I
D
(A)
15
V
GS
=4.5V
40
20
0
0
0.5
1
1.5
2
2.5
3.5V
V
GS
=10V
0
0
6
12
18
24
30
Drain - Source Voltage V
DS
(V)
Drain - Current I
D
(A)
Fig3. I
D
- V
GS
Drain-Source On-Resistance R
DS(ON)
(mΩ)
100
V
DS
=5V
Fig4. R
DS(on)
- T
j
20
V
GS
=10V, I
D
=14A
Drain Current I
D
(A)
80
60
40
20
0
1
1.5
2
2.5
3
3.5
4
4.5
25
C
T
a
=125
C
-55
C
16
12
8
4
0
-75
-50
-25
0
25
50
75
100 125 150
Gate Source Volatage V
GS
(V)
Junction Temperature Tj ( C )
Fig5. V
th
- T
j
Gate Threshold Voltage V
th
(V)
5
4
3
2
1
0
-75
1000
Fig6. I
S
- V
SDF
Reverse Drain Current I
S
(A)
V
GS
=V
DS
I
D
=250µA
100
Ta=125 C
10
Ta=25 C
1
0.1
-50
-25
0
25
50
75
100 125 150
0.2
0.4
0.6
0.8
1
1.2
Junction Temperature Tj ( C)
Source - Drain Forward Voltage V
SDF
(V)
2008. 6. 10
Revision No : 0
3/5
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