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KMB2D0N60SA_08

Description
N-Ch Trench MOSFET
File Size57KB,5 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet View All

KMB2D0N60SA_08 Overview

N-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
KMB2D0N60SA
N-Ch Trench MOSFET
L
E
B
L
FEATURES
H
2
A
G
1
3
V
DSS
=60V, I
D
=2A
Drain-Source ON Resistance
R
DS(ON)
=160m (Max.) @ V
GS
=10V
R
DS(ON)
=220m (Max.) @ V
GS
=4.5V
Super High Dense Cell Design
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
C
N
M
K
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
)
SYMBOL
V
DSS
V
GSS
N-Ch
60
20
2.0
1.6
10
1.0
1.25
W
0.8
150
-55 150
100
/W
A
A
UNIT
V
V
SOT-23
DC@Ta=25
Drain Current
DC@Ta=70
Pulsed
Drain-Source-Diode Forward Current
Drain Power Dissipation
Ta=25
Ta=70
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
I
D
I
DP
I
S
P
D
T
j
T
stg
R
thJA
KND
Note>*Surface Mounted on 1”
×
1” FR4 Board, t≤5sec
PIN CONNECTION (TOP VIEW)
D
3
3
2
1
G
S
2
1
2008. 2. 25
Revision No : 1
J
D
1/5
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