SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and DC-DC
Converter Applications.
FEATURES
V
DSS
=30V, I
D
=6A.
Drain-Source ON Resistance.
R
DS(ON)
=28m
R
DS(ON)
=42m
(Max.) @V
GS
=10V
(Max.) @V
GS
=4.5V
8
KMB6D0DN30QA
Dual N-Ch Trench MOSFET
H
T
D
P
G
L
A
5
B1 B2
Super High Dense Cell Design
High Power and Current Handing Capability
1
4
DIM
A
B1
B2
D
G
H
L
P
T
MILLIMETERS
_
4.85
+
0.2
_
3.94
+
0.2
_
0.3
6.02
+
_
0.4
+
0.1
0.15+0.1/-0.05
_
1.63
+
0.2
_
0.65
+
0.2
1.27
0.20+0.1/-0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain Source Voltage
Gate Source Voltage
DC
Drain Current
Pulsed
Drain Source Diode Forward Current
Drain Power Dissipation
25
Unless otherwise noted)
SYMBOL
V
DSS
V
GSS
I
D
*
I
DP
I
S
P
D
*
T
j
T
stg
R
thJA
*
PATING
30
20
6
30
1.7
2
150
-50~150
62.5
/W
UNIT
V
V
A
A
A
W
FLP-8
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note> *Surface Mounted on FR4 Board, t 10sec.
KMB6D0DN
30QA
PIN CONNECTION (TOP VIEW)
S1
G1
S2
G2
1
8
D1
D1
D2
D2
1
2
3
8
7
6
5
2
7
3
6
4
5
4
2008. 3. 21
Revision No : 1
1/5
KMB6D0DN30QA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Drain-Source ON Resistance
On-State Drain Current
Forward Transconductance
Dynamic
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Ratings
Source-Drain Forward Voltage
Note> * Pulse Test : Pulse width
300
V
SDF
*
, Duty cycle
I
DR
=1.7A, V
GS
=0V
2%
-
0.75
1.2
V
C
iss
C
oss
C
rss
Q
g
*
Q
gs
*
Q
gd
*
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
V
DD
=15V, V
GS
=10V
I
D
=1A, R
G
=6
V
DS
=15V, V
GS
=10V, I
D
=2A
V
DS
=15V, f=1MHz, V
GS
=0V
-
-
-
-
-
-
-
-
-
-
576
111
75
12.5
2.0
2.8
7.8
11.6
15.3
16
-
-
-
-
-
-
-
-
ns
-
-
nC
pF
BV
DSS
I
DSS
I
GSS
V
th
R
DS(ON)
*
V
GS
=4.5V, I
D
=5A
I
D(ON)
*
g
fs
*
V
DS
=5V, V
GS
=10V
V
DS
=5V, I
D
=6A
-
20
-
35
-
20
42
-
-
A
S
I
D
=250 A, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=
20V, V
DS
=0V
30
-
-
1.0
-
-
-
-
1.7
24
-
1
100
2.5
28
m
V
A
nA
V
SYMBOL
) UNLESS OTHERWISE NOTED
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
DS
=V
GS,
I
D
=250 A
V
GS
=10V, I
D
=6A
2008. 3. 21
Revision No : 1
2/5
KMB6D0DN30QA
Fig1. I
D
- V
DS
10
Fig2. R
DS(on)
- I
D
Drain Source On Resistance R
DS(ON)
(Ω)
0.16
Common Source
0.14
Ta= 25 C
Pulse Test
Drain Current I
D
(A)
8
V
GS
=10, 9, 8, 7, 6, 5, 4V
0.12
0.1
0.08
0.06
0.04
0.02
0
0
5
10
15
V
GS
=10.0
V
GS
=4.5
6
4
2
V
GS
=2.5V
V
GS
=1.5V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
20
Drain - Source Voltage V
DS
(V)
Drain Current I
D
(A)
Fig3. I
D
- V
GS
Normalized On Resistance R
DS(ON)
25
1.6
1.4
1.2
1.0
0.8
0.6
0
V
GS
= 10V
I
D
= 6A
Fig4. R
DS(ON)
- T
j
Drain Current I
D
(A)
20
15
10
5
0
125 C
25 C
-55 C
0
1.0
2.0
3.0
4.0
5.0
6.0
-75
-50
-25
0
25
50
75
100 125 150
Gate - Source Voltage V
GS
(V)
Junction Temperature Tj ( C )
Fig5. V
th
- Tj
Normalized Threshold Voltage V
th
Reverse Drain Current I
DR
(A)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
V
DS
= V
GS
I
D
= 250µA
Fig6. I
S
- V
SDF
40
10
1
-50
-25
0
25
50
75
100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
Junction Temperature Tj ( C )
Source - Drain Voltage V
SDF
(V)
2008. 3. 21
Revision No : 1
3/5
KMB6D0DN30QA
Fig7. C - V
DS
1200
1000
10
Fig8. Qg - V
GS
Gate - Source Voltage V
GS
(V)
V
DS
= 15
V
I
D
= 2A
8
Capacitance (pF)
800
600
400
200
0
Coss
6
Ciss
4
2
Crss
0
0
3
6
9
12
15
0
5
10
15
20
25
30
Drain - Source Voltage V
DS
(V)
Gate - Charge Qg (nC)
Fig9. Safe Operation Area
10
2
Operation in this
area is limited by R
DS(ON)
100µs
1ms
10ms
100ms
Drain Current I
D
(A)
10
1
10
0
1s
DC 10s
10
-1
V
GS
= 10V
SINGLE PULSE
R
θJA
= 62.5 C/W
10
-2 -1
10
10
0
10
1
10
2
Drain - Source Voltage V
DS
(V)
Fig10. Transient Thermal Response Curve
Normalized Effective Transient
Thermal Resistance
1
0.5
0.2
10
-1
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
Single Pluse
R
θJA
= 62.5 C/W
10
-2
10
-3
10
-4
10
-3
10
-2
10
-1
1
10
1
10
2
10
3
Square Wave Pulse Duration (sec)
2008. 3. 21
Revision No : 1
4/5
KMB6D0DN30QA
Fig11. Gate Charge
VGS
10 V
Schottky
Diode
ID
0.5
VDSS
ID
1.0 mA
V
DS
VGS
Q
Qgs
Qgd
Qg
Fig12. Resistive Load Switching
RL
VDS
90%
0.5 VDSS
6Ω
VDS
VGS
10%
t
d(on)
tr
t
on
t
d(off)
10 V
VGS
t
f
t
off
2008. 3. 21
Revision No : 1
5/5
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