SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter.
KMB6D0NP40QA
N and P-Ch Trench MOSFET
H
T
D
P
G
L
FEATURES
N-Channel
: V
DSS
=40V, I
D
=6A.
: R
DS(ON)
=31m (Max.) @ V
GS
=10V
: R
DS(ON)
=45m (Max.) @ V
GS
=4.5V
P-Channel
: V
DSS
=-40V, I
D
=-5A.
: R
DS(ON)
=45m (Max.) @ V
GS
=-10V
: R
DS(ON)
=63m (Max.) @ V
GS
=-4.5V
Super High Dense Cell Design.
1
4
B1 B2
8
5
A
DIM
A
B1
B2
D
G
H
L
P
T
MILLIMETERS
_
4.85 + 0.2
_
3.94 + 0.2
_
6.02 + 0.3
_ 0.1
0.4 +
0.15+0.1/-0.05
_
1.63 + 0.2
_
0.65 + 0.2
1.27
0.20+0.1/-0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC
Drain Current
Pulsed
Source-Drain Diode Current
Drain Power Dissipation
T
A
=25
T
A
=70
Maximum Junction Temperature
Storage Temperature Range
)
SYMBOL
V
DSS
V
GSS
I
D
*
I
DP
*
I
S
*
P
D
*
T
j
T
stg
R
thJA
*
N-Ch
40
20
6
20
3.0
2
1.3
150
-55 150
62.5
/W
P-Ch
-40
20
-5
A
-20
-3.2
2
W
1.3
A
UNIT
V
V
FLP-8
Marking
Type Name
KMB6D0NP
40QA
Lot No.
Thermal Resistance, Junction to Ambient
* : Surface Mounted on FR4 Board.
PIN CONNECTION (TOP VIEW)
S1
G1
S2
G2
1
8
D1
D1
D2
D2
1
2
3
8
7
6
5
2
7
3
6
4
5
4
2008. 8. 12
Revision No : 0
1/8
KMB6D0NP40QA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
th
I
D
=250 A, V
GS
=0V
I
D
=-250 A, V
GS
=0V
V
DS
=32V, V
GS
=0V
V
DS
=-32V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
V
DS
=V
GS,
I
D
=250 A
V
DS
=V
GS,
I
D
=-250 A
V
GS
=10V, I
D
=6A
Drain-Source ON Resistance
R
DS(ON)
*
V
GS
=-10V, I
D
=-5A
V
GS
=4.5V, I
D
=5A
V
GS
=-4.5V, I
D
=-2A
Forward Transconductance
Dynamic
Input Capacitance
C
iss
C
oss
C
rss
N-Ch
: V
DS
=20V, I
D
=6A, V
GS
=10V
P-Ch
: V
DS
=-20V, I
D
=-5A, V
GS
=-10V
N-Ch
: V
DS
=20V, I
D
=6A,
V
GS
=10V
P-Ch
: V
DS
=-20V, I
D
=-5A,
V
GS
=-4.5V
N-Ch
: V
DS
=20V, V
GS
=0V, f=1MHz
P-Ch
: V
DS
=-20V, V
GS
=0V, f=1MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Ch
: V
DD
=20V, I
D
=6A,
V
GS
=10V, R
G
=3
P-Ch
: V
DD
=-20V, V
GS
=-10V,
R
G
=3 , I
D
=-5A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
420
850
160
220
40
82
12.0
15.0
1.6
2.0
2.6
6.5
9.0
17.0
8.9
13.2
23.6
38.0
3.4
15.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
nC
pF
g
fs
*
V
DS
=5V, I
D
=6A
V
DS
=-5V, I
D
=-4A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
40
-40
-
-
-
-
1.0
-1.0
-
-
-
-
-
-
-
-
-
-
-
-
2.3
-2.0
19.6
31.2
39.9
47.6
2.2
9.5
-
-
1
-1
100
100
3.0
-3.0
31.0
45.0
45.0
63.0
-
-
S
m
V
A
V
SYMBOL
)
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
Gate Leakage Current
nA
Gate Threshold Voltage
Output Capacitance
Reverse transfer Capacitance
Total Gate Charge
Q
g
*
Gate-Source Charge
Q
gs
*
Gate-Drain Charge
Q
gd
*
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Source-Drain Diode Ratings
Source-Drain Diode Forward Voltage
Note>* Pulse Test : Pulse width <300
V
SDF
*
I
S
=1.0A, V
GS
=0V
I
S
=-1.0A, V
GS
=0V
N-Ch
P-Ch
-
-
0.71
-0.71
1.2
V
-1.2
, Duty cycle < 2%
2008. 8. 12
Revision No : 0
2/8
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