SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for power management in PC, portable
equipment and battery powered systems.
KMB7D0DN40QA
Dual N-Ch Trench MOSFET
H
T
D
P
G
L
FEATURES
V
DSS
=40V, I
D
=7A.
Drain to Source on Resistance.
R
DS(ON)
=25m
R
DS(ON)
=45m
(Max.) @V
GS
=10V
(Max.) @V
GS
=4.5V
1
8
A
5
B1 B2
4
DIM
A
B1
B2
D
G
H
L
P
T
MILLIMETERS
_
4.85
+
0.2
_
3.94
+
0.2
_
0.3
6.02
+
_
0.4
+
0.1
0.15+0.1/-0.05
_
1.63
+
0.2
_
0.65
+
0.2
1.27
0.20+0.1/-0.05
Maximum Ratings (Ta=25
Unless otherwise noted)
SYMBOL PATING UNIT
V
DSS
V
GSS
40
20
7
36
1.7
2
1.44
-55~150
-55~150
62.5
/W
V
V
A
A
A
W
W
CHARACTERISTIC
Drain to Source Voltage
Gate to Source Voltage
Drain Current
T
a
=25
Pulsed
Drain to Source Diode Forward Current
Drain Power Dissipation
T
a
=25
T
a
=100
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
FLP-8
I
D
I
DP
I
S
P
D
T
j
T
stg
R
thJA
KMB7D0DN
40QA
Note1) Surface Mounted on 1” 1” FR4 Board., t≤10sec
PIN CONNECTION (TOP VIEW)
S
1
G
1
S
2
G
2
1
8
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
2
7
3
6
4
5
2009. 9. 24
Revision No : 2
1/5
KMB7D0DN40QA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
Static
Drain to Source Breakdown Voltage
Drain Cut-off Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source on Resistance
On-State Drain Current
Forward Transconductance
Dynamic
Input Capaclitance
Ouput Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source to Drain Diode Ratings
Source to Drain Forward Voltage
Note2) Pulse Test : Pulse width
10
V
SD
, Duty cycle
I
S
=1.7A, V
GS
=0V
1%
-
0.78
1.2
V
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20V, V
GS
=10V
I
D
=1A, R
G
=3.3
V
DS
=20V, V
GS
=4.5V, I
D
=6A
V
DS
=20V, f=1MHz, V
GS
=0V
-
-
-
-
-
-
-
-
-
-
954
201
82
11.6
2.8
2.2
16.7
3.6
28.7
10.1
-
-
-
-
-
-
-
-
ns
-
-
nC
pF
BV
DSS
I
DSS
I
GSS
V
th
R
DS(ON)
I
D(ON)
g
fs
I
D
=250 A, V
GS
=0V
V
DS
=32V, V
GS
=0V
V
GS
=
20V, V
DS
=0V
40
-
-
1
-
-
15
-
-
-
-
1.8
20
35
-
8
-
1
100
2.5
25
45
-
-
m
A
S
V
A
A
V
SYMBOL
) UNLESS OTHERWISE NOTED
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
DS
=V
GS,
I
D
=250 A
V
GS
=10V, I
D
=6A
V
GS
=4.5V, I
D
=5A
V
DS
=5V, V
GS
=10V
V
DS
=5V,
2009. 9. 24
Revision No : 2
2/5
KMB7D0DN40QA
20
V
GS
=10V
Drain to Source On Resistance R
DS(ON)
(mΩ)
Fig1. I
D
- V
DS
Fig2. R
DS(on)
- I
D
50
40
30
V
GS
=10V
Drain Current I
D
(A)
16
12
8
4.0V
V
GS
=4.5V
20
10
0
0
4
8
12
16
20
3.5V
4
V
GS
=3.0V
0
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Fig3. I
D
- V
GS
20
2.0
Fig4. R
DS(on)
- T
j
Drain Current I
D
(A)
16
12
25
C
Normalized Drain Source On
Resistance R
DS(ON)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75
-50
0
25
50
75
100 125 150 175
V
GS
=4.5V, I
D
=5A
V
GS
=10V, I
D
=6A
8
T
j
=-55
C
4
0
1
2
150
C
3
4
5
Gate to Source Volatage V
GS
(V)
Junction Temperature Tj ( C )
Normalized Gate to Source Threshold Voltage V
th
Fig5. V
th
- T
j
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75 -50 -25
0
25
50
75 100 125 150 175
Fig6. I
S
- V
SD
10
2
Reverse Drain Current I
S
(A)
V
DS
=V
GS,
I
D
=250µA
10
1
Tj=150 C
Tj=25 C
Tj=-55 C
10
0
10
-1
10
-2
0.2
0.4
0.6
0.8
1.0
1.2
Junction Temperature Tj ( C)
Source to Drain Voltage V
SD
(V)
2009. 9. 24
Revision No : 2
3/5
KMB7D0DN40QA
Fig 7. C - V
DS
1500
10
Fig 8. V
GS
- Qg
Gate to Source Voltage V
GS
(V)
f=1MHz
V
DS
= 20V, I
D
= 6A
1200
8
6
4
2
0
0
3
6
9
12
15
Capacitance (pF)
Ciss
900
600
300
0
0
Coss
Crss
10
20
30
40
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
Fig9. Safe Operation Area
10
2
Drain to Current I
D
(A)
10
1
ON
100µs
M
LI
)
IT
1ms
10ms
100ms
10
0
R
D
S(
10
-1
10
-2
10
-2
V
GS
= 10V
SINGLE PULSE
T
j
= 25 C
DC
10
-1
10
0
10
1
10
2
Drain to Source Voltage V
DS
(V)
Fig10. Transient Thermal Response Curve
10
1
NORMALIZED EFFECTIVE
TRANSIENT THER MAL RESISTANCE
1
0.5
0.2
0.1
10
-1
0.05
0.02
0.01
SINGLE
10
-2
P
DM
t
1
t
2
R
θJA
= 71.9 C/W
10
-3
10
-4
10
-3
10
-2
10
-1
1
10
1
10
2
10
3
Square wave pulse Duration tw (sec)
2009. 9. 24
Revision No : 2
4/5
KMB7D0DN40QA
Fig.7 Gate Charge Circuit and Wave Form
VGS
10 V
Schottky
Diode
ID
0.5
VDSS
ID
1.0 mA
V
DS
VGS
Q
Qgs
Qgd
Qg
Fig.8 Resistive Load Switching
RL
VDS
90%
0.5 VDSS
6Ω
VDS
10 V
VGS
10%
t
d(on)
tr
t
on
t
d(off)
VGS
t
f
t
off
2009. 9. 24
Revision No : 2
5/5
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