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KMB7D0NP30QA_11

Description
N and P-Ch Trench MOSFET
File Size1MB,9 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet View All

KMB7D0NP30QA_11 Overview

N and P-Ch Trench MOSFET

SEMICONDUCTOR
TECHNICAL DATA
General Description
Switching regulator and DC-DC Converter applications.
It’s mainly suitable for Back-light Inverter.
KMB7D0NP30QA
N and P-Ch Trench MOSFET
FEATURES
・N-Channel
: V
DSS
=30V, I
D
=7A.
: R
DS(ON)
=23.5mΩ(Max.) @ V
GS
=10V
: R
DS(ON)
=39mΩ(Max.) @ V
GS
=4.5V
・P-Channel
: V
DSS
=-30V, I
D
=-5A.
: R
DS(ON)
=45.5mΩ(Max.) @ V
GS
=-10V
: R
DS(ON)
=80mΩ(Max.) @ V
GS
=-4.5V
・Super
High Dense Cell Design.
・Reliable
and rugged.
MAXIMUM RATING
(Ta=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC
Drain Current
Pulsed
(note1)
Source-Drain Diode Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note : *Sorface Mounted on FR4 Board
SYMBOL
V
DSS
V
GSS
I
D
*
I
DP
I
S
P
D
*
T
j
T
stg
R
thJA
*
N-Ch
30
±20
7
29
1.7
2
150
-55½150
62.5
P-Ch
-30
±20
-5
A
-20
-1.7
A
W
℃/W
UNIT
V
V
PIN CONNECTION (TOP VIEW)
2011. 3. 18
Revision No : 3
1/9
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