1MBH25-120,1MBH25D-120,
1200V / 25A
Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Molded IGBT
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
1MBH25-120 / IGBT
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector
DC
Tc=25°C
current
Tc=100°C
1ms
Tc=25°C
Max. power dissipation(IGBT)
Symbol
V
CES
V
GES
I
C25
I
C100
Icp
P
C
T
j
T
stg
-
Rating
1200
±20
38
25
114
310
+150
-40 to +150
70
Unit
V
V
A
A
A
W
°C
°C
N·cm
Equivalent Circuit Schematic
IGBT
C:Collector
G:Gate
Operating temperature
Storage temperature
Screw torque
E:Emitter
1MBH25D-120 / IGBT+FWD
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector
current
DC
1ms
Tc=25°C
Tc=100°C
Tc=25°C
Symbol
V
CES
V
GES
I
C25
I
C100
Icp
P
C
P
C
T
j
T
stg
-
Rating
1200
±20
38
25
114
310
145
+150
-40 to +150
70
Unit
V
V
A
A
A
W
W
°C
°C
N·cm
IGBT + FWD
C:Collector
Max. power dissipation (IGBT)
Max. power dissipation (FWD)
Operating temperature
Storage temperature
Screw torque
G:Gate
E:Emitter
1MBH25-120, 1MBH25D-120
Electrical characteristics (at Tj=25°C unless otherwise specified)
1MBH25-120 / IGBT
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
off
t
f
Characteristics
Min.
Typ.
–
–
5.5
–
–
–
–
–
–
–
–
–
–
–
–
2500
500
200
–
–
–
–
Conditions
Max.
1.0
20
8.5
3.5
–
–
–
1.2
0.6
1.5
0.5
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=25mA
V
GE
=15V, I
C
=25A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V I
C
=25A
V
GE
=±15V
R
G
=82 ohm
(Half Bridge)
Molded IGBT
Unit
mA
µA
V
V
pF
µs
1MBH25D-120 / IGBT+FWD
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
FWD forward on voltage
Reverse recovery time
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
off
t
f
V
F
t
rr
Characteristics
Min.
Typ.
–
–
5.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2500
500
200
–
–
–
–
–
–
Conditions
Max.
1.0
20
8.5
3.5
–
–
–
1.2
0.6
1.5
0.5
3.0
0.35
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=25mA
V
GE
=15V, I
C
=25A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V, I
C
=25A
V
GE
=±15V
R
G
=82 ohm
(Half Bridge)
I
F
=25A, V
GE
=0V
V
I
F
=25A, V
GE
=-10V, di/dt=100A/µs µs
mA
µA
V
V
pF
Unit
µs
Thermal resistance characteristics
1MBH25-120 / IGBT
Item
Thermal resistance
Symbol
Rth(j-c)
Characteristics
Min.
Typ.
–
–
Conditions
Max.
0.40
IGBT
°C/W
Unit
1MBH25D-120 / IGBT+FWD
Item
Thermal resistance
Symbol
Rth(j-c)
Rth(j-c)
Characteristics
Min.
Typ.
–
–
–
–
Conditions
Max.
0.40
0.86
IGBT
FWD
°C/W
°C/W
Unit
Outline drawings, mm
1MBH25-120, 1MBH25D-120
TO-3PL
1MBH25-120, 1MBH25D-120
Characteristics
1MBH25-120,1MBH25D-120
Collector current vs. Collector-Emitter voltage
Tj=25°C
50
50
Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj=125°C
40
Collector current : Ic [A]
Collector current : Ic [A]
40
30
30
20
20
10
10
0
0
1
2
3
4
5
Collector-Emitter voltage : V
CE
[V]
0
0
1
2
3
4
5
Collector-Emitter voltage : V
CE
[V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
10
10
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
Collector-Emitter voltage : V
CE
[V]
8
Collector-Emitter voltage : V
CE
[V]
8
6
6
4
4
2
2
0
0
5
10
15
20
Gate-Emitter voltage : V
GE
[V]
0
0
5
10
15
20
Gate-Emitter voltage : V
GE
[V]
Switching time vs. Collector current
Vcc=600V, R
G
=82 ohm, V
GE
=±15V, Tj=25°C
Switching time vs. Collector current
Vcc=600V, R
G
=82 ohm, V
GE
=±15V, Tj=125°C
1000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
100
10
0
10
20
Collector current : Ic [A]
30
40
10
0
10
20
Collector current : Ic [A]
30
40
1MBH25-120, 1MBH25D-120
Characteristics
1MBH25-120,1MBH25D-120
Switching time vs. R
G
Vcc=600V, Ic=25A, V
GE
=±15V, Tj=25°C
10000
IGBT Module
Switching time vs. R
G
Vcc=600V, Ic=25A, V
GE
=±15V, Tj=125°C
10000
Switching time : ton, tr, toff, tf [n sec.]
1000
Switching time : ton, tr, toff, tf [n sec.]
1000
100
100
Gate resistance : R
G
[ohm]
100
100
Gate resistance : R
G
[ohm]
Dynamic input characteristics
1000
Tj=25°C
25
10000
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Collector-Emitter voltage : V
CE
[V]
Capacitance : Cies, Coes, Cres [nF]
800
20
600
15
400
10
Gate-Emitter voltage : V
GE
[V]
1000
100
200
5
0
0
50
100
150
200
250
Gate charge : Qg [nC]
300
350
400
0
10
0
5
10
15
20
25
Collector-Emitter voltage : V
CE
[V]
30
35
Reversed biased safe operating area
<
>
+V
GE
=15V, -V
GE
= 15V, Tj < 125°C, R
G
= 82 ohm
=
600
50
500
40
Typical short circuit capability
Vcc=800V, R
G
=82 ohm, Tj=125°C
60
50
Short circuit time current : Isc [A]
Collector current : Ic [A]
400
40
30
300
30
20
200
20
10
100
10
0
0
0
0
200
400
600
800
1000
1200
5
10
Collector-Emitter voltage : V
CE
[V]
15
Gate voltage : V
GE
[V]
20
25
Short circuit time : tsc [µs]
1MBH25-120, 1MBH25D-120
Characteristics
1MBH25-120,1MBH25D-120
Transient thermal resistance
IGBT Module
Thermal resistance : R
th (j-c)
[°C/W]
10
1
10
0
10
-1
10
-2
10
-4
10
-3
10
-2
Pulse width : P
W
[sec.]
10
-1
10
0
1MBH25D-120
Reverse recovery time vs. Forward current
-di/dt=75A /
µsec
800
20
Reverse recovery current vs. Forward current
-di/dt=75A /
µsec
600
reverse recovery time : trr [nsec]
15
400
reverse recovery current : Irr [A]
10
200
5
0
0
10
20
30
40
Forward current : I
F
[A]
0
0
10
20
Forward current : I
F
[A]
30
40
Forward current vs. Foeward voltage
1000
50
Reverse recovery time characteristics vs. -di/dt
IF=25A
, Tj=125°C
25
800
40
20
reverse recovery time : trr [nsec]
600
15
30
Forward current : I
F
[A]
20
400
10
10
200
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0
0
50
100
150
-di/dt
200
250
300
[ A / µsec ]
Forward voltage : V
F
[V]
reverse recovery current : Irr [A]
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