2MBI150SC-120
1200V / 150A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
IGBT Module
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector Continuous
current
1ms
Symbol
V
CES
V
GES
Tc=25°C IC
Tc=80°C
Tc=25°C IC pulse
Tc=80°C
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
is
Mounting *
2
Terminals *
2
Rating
1200
±20
200
150
400
300
150
300
1000
+150
-40 to +125
AC 2500 (1min. )
3.5
3.5
Unit
V
V
A
A
A
A
A
A
W
°C
°C
V
N·m
N·m
Equivalent Circuit Schematic
C2E1
C1
E2
1ms
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage *
1
Screw torque
G1
E1
G2
E2
*
1 :
Aii terminals should be connected together when isolation test will be done
*
2 :
Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
r(i)
t
off
t
f
V
F
t
rr
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
2
Characteristics
Min.
Typ.
–
–
–
5.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
7.2
2.3
2.8
18000
3750
3300
0.35
0.25
0.1
0.45
0.08
2.3
2.0
–
Conditions
Max.
2.0
0.4
8.5
2.6
–
–
–
–
1.2
0.6
–
1.0
0.3
3.0
–
0.35
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=150mA
Tc=25° C V
GE
=15V, I
C
=150A
Tc=125°C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=150A
V
GE
=±15V
R
G
=5.6 ohm
Tj=25°C
Tj=125°C
I
F
=150A
Conditions
Max.
0.125 IGBT
0.26 Diode
the base to cooling fin
–
°C/W
°C/W
°C/W
I
F
=150A, V
GE
=0V
V
µs
Unit
mA
µA
V
V
pF
µs
Turn-off time
Forward on voltage
Reverse recovery time
Thermal resistance characteristics
Item
Thermal resistance
Characteristics
Min.
Typ.
–
–
–
–
–
0.025
Unit
*
2
: This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI150SC-120
Characteristics (Representative)
Collector current vs. Collector-Emiiter voltage
Tj= 25°C (typ.)
350
VGE= 20V
15V
12V
350
IGBT Module
Collector current vs. Collector-Emiiter voltage
Tj= 125°C (typ.)
VGE= 20V
15V
12V
300
300
250
250
Collector current : Ic [ A ]
Collector current : Ic [ A ]
200
10V
150
200
10V
150
100
100
50
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
50
8V
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
350
Tj= 25°C
Tj= 125°C
8
250
10
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
300
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
200
6
150
4
Ic= 300A
2
Ic= 150A
Ic= 75A
100
50
0
0
1
2
3
4
5
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
50000
1000
Dynamic Gate charge (typ.)
Vcc=600V, Ic=150A, Tj= 25°C
25
800
Capacitance : Cies, Coes, Cres [ pF ]
20
Cies
10000
Collector - Emitter voltage : VCE [ V ]
600
15
5000
400
10
Coes
1000
Cres
500
0
5
10
15
20
25
30
35
Collector - Emitter voltage : VCE [ V ]
200
5
0
0
500
1000
Gate charge : Qg [ nC ]
0
1500
2MBI150SC-120
IGBT Module
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 5.6ohm, Tj= 25°C
1000
1000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 5.6ohm, Tj= 125°C
toff
Switching time : ton, tr, toff, tf [ nsec ]
500
Switching time : ton, tr, toff, tf [ nsec ]
toff
500
ton
ton
tr
tr
tf
100
100
tf
50
0
50
100
150
200
250
Collector current : Ic [ A ]
50
0
50
100
150
200
250
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C
5000
ton
40
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=5.6ohm
Eon(125°C)
tr
1000
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
toff
Switching time : ton, tr, toff, tf [ nsec ]
30
Eon(25°C)
20
Eoff(125°C)
500
Eoff(25°C)
10
Err(125°C)
100
tf
Err(25°C)
50
1
10
Gate resistance : Rg [ ohm ]
100
0
0
100
200
300
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125°C
100
Eon
300
350
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
80
250
60
200
40
Eoff
20
150
100
50
Err
0
1
10
Gate resistance : Rg [ ohm ]
100
0
0
200
400
600
800
1000
1200
1400
2MBI150SC-120
IGBT Module
Forward current vs. Forward on voltage (typ.)
350
Tj=125°C
Tj=25°C
trr(125°C)
300
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=5.6ohm
300
250
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Irr(125°C)
100
trr(25°C)
Forward current : IF [ A ]
200
Irr(25°C)
150
100
50
0
0
1
2
Forward on voltage : VF [ V ]
3
4
10
0
50
100
150
200
250
Forward current : IF [ A ]
Transient thermal resistance
0.5
FWD
Thermal resistanse : Rth(j-c) [ °C/W ]
IGBT
0.1
0.05
0.01
0.005
0.001
0.01
0.1
1
Pulse width : Pw [ sec ]
Outline Drawings, mm
mass : 240g
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