2MBI200PB-140
IGBT Module P-Series
1400V / 200A 2 in one-package
Features
· Small temperature dependence of the turn-off switching loss
· Easy to connect in parallel
· Wide RBSOA (square up to 2 time of rated current) and high short-
circuit withstand capability
· Low loss and soft-switching (reduction of EMI noise)
Equivalent Circuit Schematic
C1
E2
Applications
· General purpose inverter
· AC and DC Servo drive amplifier
· Uninterruptible power supply
C2E1
G1 E1
G2 E2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
V
CES
V
GES
I
C
I
C
p
-I
C
-I
C
pulse
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Mounting *
2
Terminals *
3
P
C
T
j
T
stg
V
iso
1 device
Conditions
Continuous Tc=25°C
Tc=80°C
1ms
Tc=25°C
Tc=80°C
Rating
1400
±20
300
200
600
400
200
400
1500
+150
-40 to +125
2500
3.5
4.5
Unit
V
V
A
W
°C
VAC
N·m
AC:1min.
*
1 :
All terminals should be connected together when isolation test will be done.
*
2 :
Recommendable value : 2.5 to 3.5 N·m(M5) *
3 :
Recommendable value : 3.5 to 4.5 N·m(M6)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
I
CES
Conditions
V
GE
=0V, V
CE
=1400V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=200mA
V
GE
=15V, I
C
=200A, Tj=25°C
V
GE
=15V, I
C
=200A, Tj=125°C
V
CE
=10V
V
GE
=0V
f=1MHz
V
CC
=600V
I
C
=200A
V
GE
=±15V
R
G
= 4.7
Ω
I
F
=200A, V
GE
=0V
I
F
=200A
Characteristics
Min.
Typ.
–
–
–
6.0
–
–
–
–
–
–
–
–
–
–
–
–
8.0
2.7
3.3
20000
3000
1300
–
–
–
–
2.4
–
Unit
Max.
2.0
400
9.0
3.0
–
–
–
–
1.20
0.60
1.00
0.30
3.3
0.35
mA
nA
V
V
pF
I
GES
V
GE(th)
Collector-Emitter saturation voltage V
CE(sat)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
C
ies
C
oes
C
res
t
on
t
r
t
off
t
f
V
F
t
rr
µs
V
µs
Thermal resistance characteristics
Items
Thermal resistance
Contact Thermal resistance
Symbols
Rth(j-c)
Rth(j-c)
Rth(c-f)*
4
Conditions
IGBT
Diode
the base to cooling fin
Characteristics
Min.
Typ.
–
–
–
–
–
0.025
Unit
Max.
0.085
0.180
–
°C/W
°C/W
°C/W
*
4
: This is the value which is defined mounting on the additional cooling fin with thermal compound.
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