2MBI300U4N-170-50
IGBT MODULE (U series)
1700V / 300A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
Ic
Collector current
Icp
-Ic
-Ic pulse
Pc
Tj
Tstg
Conditions
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum ratings
1700
±20
450
300
900
600
300
600
1385
150
-40 to +125
3400
3.5
4.5
Units
V
V
Maximum Ratings and Characteristics
Continuous
1ms
1ms
1 device
A
Collector power dissipation
Junction temperature
Storage temperature
between terminal and copper base (*1)
Isolation voltage
V
iso
between thermistor and others (*2)
Mounting (*3)
Screw torque
-
Terminals (*4)
W
°C
VAC
Nm
AC : 1min.
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done.
Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*5)
Thermistor
Resistance
B value
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
V
CE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
V
F
(chip)
trr
R lead
R
B
Conditions
V
GE
= 0V, V
CE
= 1700V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 300mA
V
GE
= 15V
I
C
= 300A
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 900V
I
C
= 300A
V
GE
= ±15V
R
G
= 1.5Ω
V
GE
= 0V
I
F
= 300A
I
F
= 300A
T=25°C
T=100°C
T=25/50°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Characteristics
min.
typ.
max.
-
-
3.0
-
-
600
4.5
6.5
8.5
-
2.70
2.90
-
3.10
-
-
2.30
2.45
-
2.65
-
-
28
-
-
0.62
1.20
-
0.39
0.60
-
0.05
-
-
0.55
1.50
-
0.09
0.30
-
2.10
2.40
-
2.30
-
-
1.80
1.95
-
2.00
-
-
0.18
0.6
-
1.00
-
-
5000
-
465
495
520
3305
3375
3450
Units
mA
nA
V
V
nF
µs
Inverter
V
µs
mΩ
Ω
K
Note *5: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*6)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound
Characteristics
min.
typ.
max.
-
-
0.09
-
-
0.15
-
0.0167
-
Units
°C/W
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI300U4N-170-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
800
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C/ chip
800
Collector current : Ic [A]
400
10V
Collector current : Ic [A]
600
VGE=20V 15V
12V
600
VGE=20V 15V
12V
400
10V
200
8V
0
0
1
2
3
4
5
200
8V
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
800
Tj=25°C
Collector current : Ic [A]
600
Tj=125°C
400
Collector - Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
Ic=600A
Ic=300A
Ic=150A
200
2
0
0
1
2
3
4
5
0
5
10
15
20
25
Gate-Emitter voltage : VGE [V]
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE
[ 5V/div ]
1000.0
Capacitance : Cies, Coes, Cres [ nF ]
Dynamic Gate charge (typ.)
Vcc=900V, Ic=300A, Tj= 25°C
100.0
Cies
10.0
Coes
1.0
Cres
0.1
0
10
20
30
Collector-Emitter voltage : VCE [V]
VCE
VGE
0
200
400
600
800
1000
Gate charge : Qg [nC]
2
2MBI300U4N-170-50
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=1.5Ω, Tj= 25°C
10000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time : ton, tr, toff, tf [ nsec ]
10000
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=1.5Ω, Tj=125°C
1000
ton
toff
tr
tf
1000
toff
ton
tr
tf
100
100
10
0
100
200
300
400
500
600
Collector current : Ic [A]
10
0
100
200
300
400
500
600
Collector current : Ic [A]
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=300A, VGE=±15V, Tj= 25°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
10000
Switching time : ton, tr, toff, tf [ nsec ]
150
125
100
75
50
25
0
0
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rg=1.5Ω
Eoff(125°C)
1000
ton
toff
tr
Err(125°C)
Eoff(25°C)
Eon(125°C)
Err(25°C)
Eon(25°C)
100
tf
10
0.1
1.0
10.0
100.0
Gate resistance : RG [Ω]
100
200
300
400
500
600
Collector current : Ic [A]
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=300A, VGE=±15V, Tj= 125°C
300
250
200
150
100
50
0
0.1
1.0
10.0
100.0
Gate resistance : RG [Ω]
Err
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 1.5Ω ,Tj <= 125°C
Stray inductance <= 100nH
800
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Eon
Collector current : Ic [A]
600
Eoff
400
200
0
0
500
1000
1500
Collector-Emitter voltage : VCE [V]
3
2MBI300U4N-170-50
IGBT Modules
Forward current vs. Forward on voltage (typ.)
chip
800
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
700
Forward current : IF [A]
600
500
400
300
200
100
0
0
1
2
3
4
Forward on voltage : VF [V]
Tj=25°C
Tj=125°C
1000
Reverse recovery characteristics (typ.)
Vcc=900V, VGE=±15V, Rg=1.5Ω
Irr (125°C)
Irr (25°C)
trr (125°C)
trr (25°C)
100
10
0
100
200
300
400
500
600
Forward current : IF [A]
Transient thermal resistance (max.)
1.000
Thermal resistanse : Rth(j-c) [ °C/W ]
[ Thermistor ]
Temperature characteristic (typ.)
100.0
FWD
0.100
IGBT
Resistance : R [ kΩ]
10.0
0.010
1.0
0.001
0.001
0.1
0.010
0.100
1.000
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
Pulse width : Pw [sec]
Temperature [
o
C ]
4
2MBI300U4N-170-50
IGBT Modules
Outline Drawings, mm
OUT
Equivalent Circuit Schematic
C
P (2)
T1
[ Thermistor ]
T2
G1
E1
OUT (3,4)
G2
E2
N (1)
5
N
P
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