2MBI300UC-120
IGBT MODULE (U series)
1200V / 300A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
Ic
Collector current
Ic pulse
Conditions
Maximum ratings
1200
±20
400
300
800
600
300
600
1470
150
-40 to +125
2500
3.5
4.5
Units
V
V
Continuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
A
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage Between terminal and copper base (*1)
V
iso
Mounting (*2)
Screw torque
Terminals (*2)
1 device
AC : 1min.
W
°C
°C
VAC
N·m
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(teminal)
V
CE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
V
F
(teminal)
V
F
(chip)
trr
R lead
Conditions
V
GE
= 0V, V
CE
= 1200V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 300mA
Tj=25°C
Tj=125°C
V
GE
= 15V
I
C
= 300A
Tj=25°C
Tj=125°C
V
GE
= 0V, V
CE
= 10V, f = 1MHz
V
CC
= 600V
I
C
= 300A
V
GE
= ±15V
R
G
= 1.1Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Characteristics
min.
typ.
max.
-
-
2.0
-
-
400
4.5
6.5
8.5
-
1.90
2.25
-
2.15
-
-
1.75
2.10
-
2.00
-
-
34
-
-
0.36
1.20
-
0.21
0.60
-
0.03
-
-
0.37
1.00
-
0.07
0.30
-
1.75
2.05
-
1.85
-
-
1.60
1.90
-
1.70
-
-
-
0.35
-
0.53
-
Units
mA
nA
V
V
nF
µs
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Note *3: Biggest internal terminal resistance among arm.
V
GE
= 0V
I
F
= 300A
I
F
= 300A
V
µs
mΩ
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Characteristics
min.
typ.
max.
-
-
0.085
-
-
0.14
-
0.025
-
Units
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI300UC-120
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj= 25°C / chip
IGBT Modules
800
700
Collector current : Ic [A]
800
700
Collector current vs. Collector-Emitter voltage
Tj= 125°C / chip
Collector current : Ic [A]
600
500
400
300
200
100
0
0
1
VGE=20V 15V
12V
600
500
400
300
200
100
0
VGE=20V 15V
12V
10V
10V
8V
2
3
4
5
8V
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
800
700
Collector current : Ic [A]
600
500
400
300
200
100
0
0
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.) / chip
Collector - Emitter voltage : VCE [ V ]
10
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=25°C / chip
Tj=25°C
Tj=125°C
8
6
4
Ic=600A
Ic=300A
Ic=150A
5
10
15
20
25
2
0
1
2
3
4
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
100.0
Capacitance : Cies, Coes, Cres [ nF ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [ 200V/div ]
Gate - Emitter voltage : VGE
[ 5V/div ]
Cies
Dynamic Gate charge (typ.)
Vcc=600V , Ic=300A , Tj= 25°C
10.0
Cres
VGE
1.0
Coes
0.1
0
10
20
30
Collector-Emitter voltage : VCE [V]
VCE
0
300
600
900
1200
1500
1800
Gate charge : Qg [ nC ]
2
2MBI300UC-120
IGBT Modules
10000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj= 25°C
Switching time : ton, tr, toff, tf [ nsec ]
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj=125°C
1000
ton
toff
tr
100
tf
1000
toff
ton
tr
100
tf
10
0
100
200
300
400
500
600
Collector current : Ic [ A ]
10
0
100
200
300
400
500
600
Collector current : Ic [ A ]
10000
Switching time : ton, tr, toff, tf [ nsec ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=300A, VGE=±15V, Tj= 25°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
60
50
40
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.1Ω
Eoff(125°C)
Eon(125°C)
ton
toff
1000
Eoff(25°C)
30
20
10
0
Eon(25°C)
tr
100
tf
Err(125°C)
Err(25°C)
10
0.1
1.0
10.0
100.0
Gate resistance : Rg [ Ω ]
0
100
200
300
400
500
600
Collector current : Ic [ A ]
250
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=300A, VGE=±15V, Tj= 125°C
Eon
800
700
Collector current : Ic [ A ]
600
500
400
300
200
100
Reverse bias safe operating area
+VGE=15V,-VGE <= 15V, RG >= 1.1Ω ,Tj <= 125°C
200
150
100
Eoff
50
Err
0.1
1.0
10.0
100.0
0
Gate resistance : Rg [ Ω ]
0
0
400
800
1200
Collector - Emitter voltage : VCE [ V ]
3
2MBI300UC-120
IGBT Modules
800
700
Forward current : IF [ A ]
600
500
400
300
200
100
0
0
Forward current vs. Forward on voltage (typ.)
chip
1000
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=1.1Ω
Tj=25°C
Tj=125°C
100
Irr (125°C)
Irr (25°C)
trr (125°C)
trr (25°C)
10
1
2
3
4
0
100
200
300
400
500
600
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
Transient thermal resistance
1.000
Thermal resistanse : Rth(j-c) [ °C/W ]
FWD
0.100
IGBT
0.010
0.001
0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
4
2MBI300UC-120
IGBT Modules
2MBI300UC-120
1. Outline
Outline Drawings, mm
Drawing ( Unit : mm )
2. Equivalent circuit
Equivalent Circuit Schematic
MS5F 5416
3
a
13
H04-004-03
5
DSP and ARM Processors
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