http://www.fujisemi.com
2MBI300VJ-120-50
IGBT MODULE (V series)
1200V / 300A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Symbols
V
CES
V
GES
Ic
Ic pulse
Collector current
-Ic
-Ic pulse
Collector power dissipation
Pc
Junction temperature
Tj
Operating junction temperature (under switching conditions)
T
jop
Case temperature
T
C
Storage temperature
Tstg
between terminal and copper base (*1)
Isolation voltage
V
iso
between thermistor and others (*2)
Mounting (*3)
Screw torque
-
Terminals (*4)
PC-Board (*5)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Conditions
Continuous
1ms
1ms
1 device
Tc=80°C
Tc=80°C
Maximum ratings
1200
±20
300
600
300
600
1595
175
150
125
-40 to +125
2500
3.5
4.5
0.6
Units
V
V
A
W
°C
VAC
Nm
Inverter
AC : 1min.
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6)
Note *5: Recommendable value : 0.4-0.6 Nm (M2.5)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
Conditions
V
GE
= 0V, V
CE
= 1200V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 300mA
V
GE
= 15V
I
C
= 300A
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 600V
I
C
= 300A
V
GE
= ±15V
R
G
= 0.93Ω
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Collector-Emitter saturation voltage
V
CE (sat)
(chip)
Inverter
Input capacitance
Turn-on time
Turn-off time
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
Forward on voltage
V
F
(chip)
Reverse recovery time
Thermistor
Resistance
B value
trr
R
B
V
GE
= 0V
I
F
= 300A
I
F
= 300A
T=25°C
T=100°C
T=25/50°C
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min.
typ.
max.
-
-
3.0
-
-
600
6.0
6.5
7.0
-
2.15
2.60
-
2.45
-
-
2.50
-
-
1.75
2.20
-
2.05
-
-
2.10
-
-
27
-
-
550
1200
-
180
600
-
120
-
-
1050
2000
-
110
350
-
2.10
2.55
-
2.25
-
-
2.20
-
-
1.70
2.15
-
1.85
-
-
1.80
-
-
200
600
-
5000
-
465
495
520
3305
3375
3450
Characteristics
min.
typ.
max.
-
-
0.094
-
-
0.150
-
0.0167
-
Units
mA
nA
V
V
nF
nsec
V
nsec
Ω
K
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*6)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Inverter FWD
with Thermal Compound
Units
°C/W
Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI300VJ-120-50
Characteristics (Representative)
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
700
600
Collector current: Ic [A]
500
400
300
200
100
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
10V
VGE=20V15V
12V
Collector current: Ic [A]
IGBT Modules
http://www.fujisemi.com
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
700
600
500
400
300
200
100
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
8V
10V
VGE= 20V 15V
12V
8V
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
VGE= 15V / chip
700
600
Collector Current: Ic [A]
500
400
300
200
100
0
0
1
2
3
4
5
Collector-Emitter Voltage: VCE [V]
Collector-Emitter Voltage: VCE [V]
Tj=25°C 125°C
150°C
[INVERTER]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
8
6
4
Ic=600A
Ic=300A
Ic=150A
5
10
15
20
25
2
0
Gate-Emitter Voltage: VGE [V]
[INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
VGE= 0V, ƒ= 1MHz, Tj= 25°C
Gate Capacitance: Cies, Coes, Cres [nF]
Collector-Emitter voltage: VCE [200V/div]
Gate-Emitter voltage: VGE [5V/div]
100
[INVERTER]
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=300A, Tj= 25°C
Cies
***
10
VGE
VCE
Cres
Coes
1
0
10
20
30
0
500 1000 1500 2000 2500 3000 3500
Gate charge: Qg [nC]
Collector-Emitter voltage: VCE [V]
2
2MBI300VJ-120-50
IGBT Modules
http://www.fujisemi.com
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=0.93Ω, Tj=25°C
10000
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=0.93Ω, Tj=125°C, 150°C
10000
Tj=125
o
C
Tj=150
o
C
1000
toff
ton
tr
100
tf
1000
toff
ton
tr
100
tf
10
0
100
200
300
400
500
600
700
10
0
100
200
300
400
500
600
700
Collector current: Ic [A]
Collector current: Ic [A]
[INVERTER]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=300A, VGE=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
1 0000
Switching time: ton, tr, toff, tf [nsec]
Tj=125 C
Tj=150
o
C
1000
o
[INVERTER]
Switching loss vs. Collector current (typ.)
Vcc=600, VGE=±15V, Rg=0.93Ω, Tj=125°C, 150°C
100
80
60
40
Err
20
Eon
0
0
100
200
300
400
500
600
700
Tj=125
o
C
Tj=150
o
C
toff
ton
tr
Eoff
tf
100
10
0.1
1
10
100
Gate resistance: Rg [Ω]
Collector current: Ic [A]
[INVERTER]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=300A, VGE=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
150
Tj=125 C
Tj=150
o
C
100
o
[INVERTER]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE=15V, Rg=0.93Ω, Tj=150°C
800
Eon
Collector current: Ic [A]
700
600
500
400
300
200
100
0
50
Eoff
Err
0
0
1
10
100
0
500
1000
1500
Gate resistance: Rg [Ω]
Collector-Emitter voltage: VCE [V]
3
2MBI300VJ-120-50
IGBT Modules
http://www.fujisemi.com
[INVERTER]
Forward Current vs. Forward Voltage (typ.)
chip
700
600
Forward current: IF [A]
500
400
300
200
100
0
0
1
2
3
Forward on voltage: VF [V]
150°C
125°C
Tj=25°C
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=0.93Ω, Tj=25°C
10000
1000
Irr
100
trr
10
0
100 200 300 400 500 600 700
Forward current: IF [A]
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=0.93Ω, Tj=125°C, 150°C
Tj=125 C
Tj=150
o
C
1000
Irr
trr
100
o
Transient Thermal Resistance (max.)
1
Thermal resistanse: Rth(j-c) [°C/W]
***
10000
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
FWD
0.1
IGBT
0.01
10
0
100 200 300 400 500 600 700
Forward current: IF [A]
0.001
0.001
0.01
0.1
1
Pulse Width : Pw [sec]
[THERMISTOR]
Temperature characteristic (typ.)
100
Resistance : R [kΩ]
10
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
Temperature [°C]
4
2MBI300VJ-120-50
IGBT Modules
http://www.fujisemi.com
Outline Drawings, mm
Equivalent Circuit Schematic
[ Inverter ]
[ Thermistor ]
+
CX1
T1
T2
G1.1
EX1.1
GND
G1.2
EX1.2
G1.3
EX1.3
G2.1
Cu-Base
EX2.1
G2.2
EX2.2
G2.3
EX2.3
5
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