2MBI600U4G-170
IGBT MODULE (U series)
1700V / 600A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
Ic
Collector current
Icp
Conditions
Maximum ratings
1700
±20
800
600
1600
1200
600
1200
3670
150
-40 to +125
3400
5.75
10
2.5
Units
V
V
Maximum Ratings and Characteristics
Continuous
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
V
iso
AC : 1min.
Mounting
Screw torque (*2)
Main Terminals
Sense Terminals
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(main terminal)
V
CE (sat)
(chip)
Cies
ton
tr
toff
tf
V
F
(main terminal)
V
F
(chip)
trr
R lead
Conditions
V
GE
= 0V, V
CE
= 1700V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 600mA
Characteristics
min.
typ.
max.
-
-
1.0
-
-
1200
5.5
6.5
7.5
-
2.43
2.61
-
2.83
-
-
2.25
2.40
-
2.65
-
-
56
-
-
3.10
-
-
1.25
-
-
1.45
-
-
0.25
-
-
1.98
2.36
-
2.18
-
-
1.80
2.15
-
2.00
-
-
0.45
-
-
0.29
-
Units
mA
nA
V
V
nF
µs
Tj=25°C
Tj=125°C
V
GE
= 15V
I
C
= 600A
Tj=25°C
Tj=125°C
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 900V, I
C
= 600A,
V
GE
= ±15V, Tj = 125°C,
R
gon
= 12Ω, R
goff
= 4.7Ω
V
GE
= 0V
I
F
= 600A
I
F
= 600A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Note *3: Biggest internal terminal resistance among arm.
V
µs
mΩ
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Characteristics
min.
typ.
max.
-
-
0.034
-
-
0.060
-
0.006
-
Units
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI600U4G-170
Characteristics (Representative)
Collector current vs. Collector-Emittervoltage (typ.)
Tj=25°C,chip
1400
1200
Collector current : Ic [A]
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C,chip
1400
VGE=20V 15V
12V
Collector current : Ic [A]
1200
1000
800
VGE=20V 15V
12V
1000
800
600
400
200
0
0.0
8V
10V
10V
600
400
200
0
0.0
8V
1.0
2.0
3.0
4.0
5.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage:VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
1400
1200
Collector current : Ic [A]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
VGE=+15V,chip
Tj=25°C
Tj=125°C
Collector-Emitter voltage : VCE [V]
Tj=25°C,chip
8
1000
800
600
400
200
0
0.0
6
4
Ic=1200A
Ic=600A
Ic=300A
2
1.0
2.0
3.0
4.0
5.0
0
5
10
15
20
Gate-Emitter voltage : VGE [V]
25
Collector-Emitter voltage : VCE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V,f=1MHz,Tj=25°C
1000
Capacitance : Cies, Coes, Cres [nF]
Collector-Emitter voltage : VCE [V]
Dynamic Gate charge (typ.)
1000
VCE
800
600
400
200
0
Tj=25°C
VGE
25
20
15
10
5
0
Gate-Emitter voltage : VGE [V]
100
Cies
10
Cres
1
0
10
20
Coes
30
0
500
1000
1500
2000
2500
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [nC]
2
2MBI600U4G-170
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=12Ω, Rgoff=4.7Ω, Tj=125°C
4.0
Switching time : ton, tr, toff, tf [us]
Switching time : ton, tr, toff, tf [us]
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=600A, VGE=±15V, Tj=125°C
6.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
200
400
600
800
ton
5.0
4.0
3.0
2.0
1.0
0.0
1000
0
4
8
12
16
20
24
Gate resistance : Rg [Ω]
ton
toff
tr
tr
toff
tf
tf
28
Collector current : Ic [A]
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=12Ω, Rgoff=4.7Ω, Tj =125°C
500
Switching loss : Eon, Eoff, Err [mJ/pulse]
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=600A, VGE=±15V, Tj=125°C
550
500
450
400
350
300
250
200
150
100
50
0
0
4
8
12
16
20
24
28
Gate resistance : Rg [Ω]
Err
Eoff
Eon
Eon
Eoff
400
350
300
250
200
150
100
50
0
0
200
400
600
800
Err
1000
Collector current : Ic [A], Forward current : IF [A]
Reverse bias safe operating area (max.)
±VGE=15V, Tj=125°C/chip
1400
1200
Collector current : Ic [A]
1000
800
600
400
200
0
0
400
800
1200
1600
2000
Collector-Emitter voltage : VCE [V]
3
Switching loss : Eon, Eoff, Err [mJ/pulse]
450
2MBI600U4G-170
IGBT Modules
Forward current vs. Forward on voltage (typ.)
chip
1400
Reverse recovery current : Irr [A]
Reverse recovery characteristics (typ.)
Vcc=900V, VGE=±15V, Rg=12Ω, Tj=125°C
600
1.2
Irr
Reverse recovery time : trr [us]
1200
Forward current : IF [A]
Tj=25°C Tj=125°C
500
400
300
200
100
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
200
400
600
800
Forward on voltage : VF [V]
Forward current : IF [A]
1.0
0.8
0.6
0.4
0.2
0.0
1000
1000
800
600
400
200
0
0.0
trr
Transient thermal resistance (max.)
1.000
Thermal resistanse : Rth (j-c) [°C/W]
0.100
FWD
IGBT
0.010
0.001
0.001
0.010
0.100
1.000
Pulse width : Pw [sec]
4
2MBI600U4G-170
IGBT Modules
Outline Drawings, mm
Equivalent Circuit Schematic
main emitter
main collector
E1
sense emitter
C2
C2
sense collector
E1
gate
sense collector
G1
C1
C1
main collector
G2
E2
E2
main emitter
gate
sense emitter
5
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