2MBI800U4G-170
IGBT MODULE (U series)
1700V / 800A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Symbols
V
CES
V
GES
Ic
Collector current
Icp
Conditions
Maximum ratings
1700
±20
1200
800
2400
1600
800
1600
4800
150
-40 to +125
3400
5.75
10
2.5
Units
V
V
Maximum Ratings and Characteristics
Continuous
1ms
-Ic
-Ic pulse
1ms
Collector power dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage
between terminal and copper base (*1)
V
iso
AC : 1min.
Mounting
Screw torque (*2)
Main Terminals
Sense Terminals
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 Nm (M6), Main Terminals : 8-10 Nm (M8), Sense Terminals : 1.7-2.5 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(main terminal)
V
CE (sat)
(chip)
Cies
ton
tr
toff
tf
V
F
(main terminal)
V
F
(chip)
trr
R lead
Conditions
V
GE
= 0V, V
CE
= 1700V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 800mA
Characteristics
min.
typ.
max.
-
-
1.0
-
-
1600
5.5
6.5
7.5
-
2.47
2.64
-
2.87
-
-
2.25
2.40
-
2.65
-
-
75
-
-
3.10
-
-
1.25
-
-
1.45
-
-
0.25
-
-
2.02
2.39
-
2.22
-
-
1.80
2.15
-
2.00
-
-
0.45
-
-
0.27
-
Units
mA
nA
V
V
nF
µs
Tj=25°C
Tj=125°C
V
GE
= 15V
I
C
= 800A
Tj=25°C
Tj=125°C
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 900V, I
C
= 800A,
V
GE
= ±15V, Tj = 125°C,
R
gon
= 8.2Ω, R
goff
= 3Ω
V
GE
= 0V
I
F
= 800A
I
F
= 800A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip (*3)
Note *3: Biggest internal terminal resistance among arm.
V
µs
mΩ
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
IGBT
FWD
with Thermal Compound (*4)
Characteristics
min.
typ.
max.
-
-
0.026
-
-
0.045
-
0.006
-
Units
°C/W
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI800U4G-170
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C, chip
1800
1600
Collector current : Ic [A]
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C, chip
1800
1600
Collector current : Ic [A]
VGE=20V 15V
12V
VGE=20V 15V
12V
1400
1200
1000
800
600
400
200
0
0.0
1.0
2.0
3.0
4.0
8V
10V
1400
1200
1000
800
600
400
200
0
0.0
1.0
2.0
3.0
4.0
5.0
8V
10V
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V, chip
1800
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C, chip
10
1600
Collector current : Ic [A]
Tj=25°C
Tj=125°C
8
1400
1200
1000
800
600
400
200
0
0.0
1.0
2.0
3.0
4.0
5.0
6
4
Ic=1600A
Ic=800A
Ic=400A
2
0
5
10
15
20
25
Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25°C
1000
Capacitance : Cies, Coes, Cres [nF]
Collector-Emitter voltage : VCE [V]
Dynamic Gate charge (typ.)
Tj=25°C
1000
VCE
800
600
400
200
0
VGE
25
20
15
10
5
0
3500
Gate-Emitter voltage : VGE [V]
100
Cies
10
Cres
Coes
1
0
10
20
30
Collector-Emitter voltage : VCE [V]
0
500
1000
1500
2000
2500
3000
Gate charge : Qg [nC]
2
2MBI800U4G-170
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=8.2Ω, Rgoff=3Ω, Tj=125°C
4.0
Switching time : ton, tr, toff, tf [us]
Switching time : ton, tr, toff, tf [us]
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=800A, VGE=±15V, Tj=125°C
6.0
ton
5.0
4.0
3.0
2.0
1.0
tf
0.0
1400
0
2
4
6
8
10
12
14
16
18
20
Gate resistance : Rg [Ω]
toff
tr
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
200
400
600
800
1000
Collector current : Ic [A]
ton
tr
toff
tf
1200
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=8.2Ω, Rgoff=3Ω, Tj=125°C
700
Switching loss : Eon, Eoff, Err [mJ/pulse]
Switching loss : Eon, Eoff, Err [mJ/pulse]
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=800A, VGE=±15V, Tj=125°C
700
600
500
400
300
200
100
0
Err
Eoff
Eon
600
500
400
300
200
100
0
0
200
400
600
800
1000
Eon
Eoff
Err
1200
1400
0
2
4
6
8
10
12
14
16
18
20
Collector current : Ic [A], Forward current : IF [A]
Gate resistance : Rg [Ω]
Reverse bias safe operating area (max.)
±VGE=15V, Tj=125°C/chip
1800
1600
Collector current : Ic [A]
1400
1200
1000
800
600
400
200
0
0
400
800
1200
1600
2000
Collector-Emitter voltage : VCE [V]
3
2MBI800U4G-170
IGBT Modules
Forward current vs. Forward on voltage (typ.)
chip
1800
1600
1400
Forward current : IF [A]
Reverse recovery characteristics (typ.)
Vcc=900V, VGE=±15V, Rg=8.2Ω, Tj=125°C
800
1.60
Irr
1.40
1.20
1.00
0.80
trr
0.60
0.40
0.20
0.00
1000 1200 1400
Reverse recovey time : trr [um]
Tj=25°C Tj=125°C
Reverse recovery current : Irr [A]
700
600
500
400
300
200
100
0
1200
1000
800
600
400
200
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
200
400
600
800
Forward on voltage : VF [V]
Forward current : IF [A]
Transient thermal resistance (max.)
0.1000
Thermal resistanse : Rth (j-c) [°C/W]
FWD
IGBT
0.0100
0.0010
0.0001
0.001
0.010
0.100
1.000
Pulse width : Pw [sec]
4
2MBI800U4G-170
IGBT Modules
Outline Drawings, mm
Equivalent Circuit Schematic
main emitter
main collector
E1
sense emitter
C2
C2
sense collector
E1
gate
sense collector
G1
C1
C1
main collector
G2
E2
E2
main emitter
gate
sense emitter
5
京公网安备 11010802033920号
EEWORLD
