SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Low Forward Voltage
Fast Reverse Recovery Time
Small Total Capacitance
A
G
L
KDS123S
SILICON EPITAXIAL PLANAR DIODE
E
B
L
DIM
A
D
B
C
D
E
G
H
J
K
P
P
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
Ultra- Small Surface Mount Package
2
3
H
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
0.7
RATING
80
80
300*
100*
2*
150
150
-55 150
UNIT
V
V
C
N
K
M
3
1. CATHODE 2
mA
mA
A
mW
J
2. ANODE 1
3. ANODE 2/CATHODE 1
D1
D2
2
1
SOT-23
* Unit Rating. Total Rating=Unit Rating
Marking
Lot. No.
Type Name
US
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Forward Voltage
Reverse Current
Total Capacitance
SYMBOL
V
F
I
R
C
T
TEST CONDITION
I
F
=100mA
V
R
=80V
V
R
=6V, f=1MHz
MIN.
-
-
-
TYP.
-
-
-
MAX.
1.2
0.1
3.5
UNIT
V
A
pF
2007. 10. 31
Revision No : 0
1/3
Embedded System
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