SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Low Forward Voltage.
Fast Reverse Recovery Time.
Small Total capacitance.
CATHODE MARK
KDS160E
SILICON EPITAXIAL PLANAR DIODE
Small Package : ESC.
C
1
E
2
D
F
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
pad dimension of 4 4mm.
)
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
*
T
j
T
stg
RATING
85
80
300
100
2
150
150
-55 150
UNIT
V
V
mA
mA
A
mW
1. ANODE
2. CATHODE
B
A
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.60 + 0.10
_ 0.10
1.20 +
_
0.80 + 0.10
_
0.30 + 0.05
_
0.60 + 0.10
_
0.13 + 0.05
ESC
* : Mounted on a glass epoxy circuit board of 20 20mm,
Marking
Type Name
UF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
t
rr
I
F
=1mA
I
F
=10mA
I
F
=100mA
V
R
=80V
V
R
=0V, f=1MHz
I
F
=10mA
TEST CONDITION
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
A
pF
nS
V
UNIT
2003. 11. 20
Revision No : 4
1/2
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