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2SC4314

Description
Power Bipolar Transistor, 15A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MTO-3P, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size98KB,1 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric View All

2SC4314 Overview

Power Bipolar Transistor, 15A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MTO-3P, 3 PIN

2SC4314 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)15 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
Minimum DC current gain (hFE)7
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Humidity sensitivity level2
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)240
Polarity/channel typeNPN
Maximum power consumption environment130 W
Maximum power dissipation(Abs)130 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)7 MHz
Maximum off time (toff)3500 ns
Maximum opening time (tons)500 ns
VCEsat-Max1.5 V
Base Number Matches1
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