INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC4197
DESCRIPTION
·Low
Noise
·High
Gain Bandwidth Product
APPLICATIONS
·Designed
for UHF frequency converter, wide band amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
25
V
V
CEO
Collector-Emitter Voltage
13
V
V
EBO
Emitter-Base Voltage
3
V
I
C
Collector Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
50
mA
P
C
0.15
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CBO
V
CE(
sat
)
I
CBO
I
CEO
I
EBO
h
FE
f
T
C
OB
CG
NF
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
Conversion Gain
Noise Figure
CONDITIONS
I
C
= 10μA ; I
E
= 0
I
C
= 20mA ; I
B
= 4mA
V
CB
= 15V; I
E
= 0
V
CE
= 13V; R
BE
=
∞
V
EB
= 3V; I
C
= 0
I
C
= 5mA ; V
CE
= 5V
I
C
= 20mA ; V
CE
= 5V
I
E
= 0 ; V
CB
= 10V;f= 1.0MHz
I
C
= 0.8mA ; V
CC
= 5V;
f
in
= 900MHz
f
osc
= 930MHz(-5dB),
f
out
= 30MHz
50
3.0
MIN
25
2SC4197
TYP.
MAX
UNIT
V
0.3
0.1
10
0.3
180
3.8
0.85
19
8
1.3
V
μA
μA
μA
GHz
pF
dB
dB
isc website：www.iscsemi.cn
2
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
2SC4197
isc website：www.iscsemi.cn
3
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
S-PARAMETER
(Emitter Common)
Test condition
V
CE
= 5 V, 100 MHz to 1000 MHz (100 MHz STEP), Z
O
= 50Ω
I
C
= 5 mA
I
C
= 10 mA
2SC4197
isc website：www.iscsemi.cn
4
INCHANGE Semiconductor
isc
RF Product Specification
isc
Silicon NPN RF Transistor
S-PARAMETER(Emitter
Common)
V
CE
= 5 V, I
C
= 5 mA, Z
O
= 50Ω
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
MAG
0.744
0.599
0.506
0.457
0.440
0.430
0.437
0.441
0.452
0.462
2SC4197
S
11
ANG
–48.4
–85.5
–110.7
–128.9
–143.5
–155.1
–163.2
–170.9
–177.1
177.5
MAG
13.142
9.669
7.201
5.696
4.687
3.977
3.453
3.070
2.746
2.508
S
21
ANG
145.9
123.5
109.5
100.6
93.9
88.1
83.5
79.1
75.4
71.9
MAG
0.034
0.053
0.064
0.072
0.079
0.087
0.095
0.104
0.113
0.122
S
12
ANG
67.5
55.9
52.6
52.7
54.3
57.1
59.4
61.3
63.6
65.6
MAG
0.876
0.702
0.586
0.520
0.480
0.452
0.432
0.417
0.402
0.390
S
22
ANG
–19.1
–28.2
–30.9
–31.2
–31.2
–31.5
–31.7
–32.4
–33.4
–34.5
V
CE
= 5 V, I
C
= 10 mA, Z
O
= 50Ω
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
MAG
0.585
0.460
0.408
0.390
0.390
0.391
0.404
0.411
0.426
0.436
S
11
ANG
–69.3
–110.1
–133.9
–149.7
–160.7
–169.8
–176.7
178.0
173.1
169.8
MAG
19.233
12.238
8.571
6.608
5.348
4.503
3.884
3.446
3.069
2.803
S
21
ANG
134.4
112.6
101.3
94.5
88.7
84.4
80.3
76.8
73.4
70.7
MAG
0.028
0.041
0.052
0.062
0.073
0.084
0.095
0.107
0.119
0.131
S
12
ANG
63.8
58.1
60.0
62.9
65.3
67.7
69.1
70.3
71.5
72.2
MAG
0.768
0.564
0.468
0.420
0.394
0.375
0.361
0.350
0.339
0.330
S
22
ANG
–25.6
–31.4
–30.5
–29.1
–28.1
–27.8
–27.7
–28.2
–29.0
–29.7
isc website：www.iscsemi.cn
5
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