INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3561
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 450V (Min)
·High
Switching Speed
APPLICATIONS
·Switching
regulator and high voltage switching applications.
·High
speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
500
V
V
CEO
Collector-Emitter Voltage
450
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current-Continuous
2
A
I
CM
Collector Current-Peak
4
A
I
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
0.5
A
20
W
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
2
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SC3561
TYP.
MAX
UNIT
V
(BR)CEO
V
(BR)CBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
I
C
= 10mA; I
B
= 0
I
C
= 1mA; I
E
= 0
I
C
= 0.8A; I
B
= 0.16A
I
C
= 0.8A; I
B
= 0.16A
V
CB
= 500V; I
E
= 0
V
EB
= 7V; I
C
= 0
I
C
= 0.8A; V
CE
= 5V
450
500
1.0
1.5
100
V
V
V
V
μA
V
CE(
sat
)
V
BE(
sat
)
I
CBO
I
EBO
h
FE
Emitter Cutoff Current
DC Current Gain
1
10
mA
isc Website:www.iscsemi.cn
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