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2SC3561

Description
High Switching Speed
File Size184KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

2SC3561 Overview

High Switching Speed

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC3561
DESCRIPTION
·High
Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 450V (Min)
·High
Switching Speed
APPLICATIONS
·Switching
regulator and high voltage switching applications.
·High
speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
500
V
V
CEO
Collector-Emitter Voltage
450
V
V
EBO
Emitter-Base Voltage
7
V
I
C
Collector Current-Continuous
2
A
I
CM
Collector Current-Peak
4
A
I
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
0.5
A
20
W
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
2
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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