BSC028N03LSC G
OptiMOS™3
Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Improved switching behaviour
• Qualified according to JEDEC
1)
for target applications
• N-channel; Logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSC028N03LSC G
Package
PG-TDSON-8
Marking
028N03LS
Product Summary
V
DS
R
DS(on),max
I
D
30
2.8
100
PG-TDSON-8
V
mΩ
A
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
100
80
100
65
Unit
A
24
400
50
75
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=50 A,
R
GS
=25
Ω
J-STD20 and JESD22
Rev. 2.2
page 1
2009-10-22
BSC028N03LSC G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=50 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
69
2.5
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
top
Device on PCB
R
thJA
6 cm
2
cooling area
2)
-
-
-
-
-
-
1.8
18
50
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=30 A
V
GS
=10 V,
I
D
=30 A
Gate resistance
Transconductance
2)
30
1
-
-
-
0.1
-
2.2
1
V
µA
-
-
-
-
-
10
10
3.4
2.3
1.5
100
100
100
4.2
2.8
-
-
Ω
S
nA
mΩ
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
50
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
See figure 3 for more detailed information
3)
Rev. 2.2
page 2
2009-10-22
BSC028N03LSC G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
10.4
5.6
5.0
9.7
22
2.9
46
-
-
-
-
29
-
61
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=30 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
3700
1200
72
7.6
5.2
31
5.0
4900
1600
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
19
31
-
-
nC
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.82
63
400
-
A
V
Reverse recovery charge
4)
5)
Q
rr
-
-
20
nC
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2009-10-22
BSC028N03LSC G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
80
120
100
60
80
P
tot
[W]
40
I
D
[A]
0
40
80
120
160
60
40
20
20
0
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
10 µs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1 µs
10
2
100 µs
1
DC
0.5
Z
thJC
[K/W]
I
D
[A]
10
1
0.2
0.1
0.05
0.02
0.01
single pulse
1 ms
10 ms
0.1
10
0
10
-1
10
-1
10
0
10
1
10
2
0.01
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.2
page 4
2009-10-22
BSC028N03LSC G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
300
5V
4.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
8
3.2 V
250
10 V
4V
6
3.5 V
200
150
R
DS(on)
[m
Ω
]
I
D
[A]
4
4.5 V
4V
5V
10 V
100
3.5 V
2
50
3.2 V
3V
2.8 V
0
0
1
2
3
0
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
200
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
250
160
200
120
150
80
g
fs
[S]
100
40
150 °C
25 °C
I
D
[A]
50
0
0
1
2
3
4
5
0
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 2.2
page 5
2009-10-22
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