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GE28F008B3TA70

Description
Flash, 1MX8, 70ns, PBGA46, VFBGA-46
Categorystorage    storage   
File Size609KB,71 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Download Datasheet Parametric Compare View All

GE28F008B3TA70 Overview

Flash, 1MX8, 70ns, PBGA46, VFBGA-46

GE28F008B3TA70 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerIntel
Parts packaging codeBGA
package instructionVFBGA-46
Contacts46
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time70 ns
Other featuresTOP BOOT BLOCK
startup blockTOP
command user interfaceYES
Data pollingNO
Durability100000 Write/Erase Cycles
JESD-30 codeR-PBGA-B46
JESD-609 codee0
length7.91 mm
memory density8388608 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size8,15
Number of terminals46
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX8
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA45,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8/3.6,3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1 mm
Department size8K,64K
Maximum standby current0.000005 A
Maximum slew rate0.055 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width6.5 mm
Intel
®
Advanced Boot Block Flash
Memory (B3)
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Datasheet
Product Features
Flexible SmartVoltage Technology
— 2.7 V – 3.6 V read/program/erase
— 12 V V
PP
fast production programming
Intel
®
Flash Data Integrator Software
—Flash Memory Manager
—System Interrupt Manager
—Supports parameter storage, streaming
data (for example, voice)
1.65 V – .5 V or 2.7 V – 3.6 V I/O option
— Reduces overall system power
High Performance
— 2.7 V – 3.6 V: 70 ns max access time
Extended Cycling Capability
—Minimum 100,000 block erase cycles
Optimized Block Sizes
— Eight 8-KB blocks for data, top or
bottom locations
— Up to 127 x 64-KB blocks for code
Automatic Power Savings Feature
—Typical I
CCS
after bus inactivity
Standard Surface Mount Packaging
—48-Ball CSP packages
—40-Lead and 48-Lead TSOP packages
Block Locking
— V
CC
-level control through Write Protect
WP#
Density and Footprint Upgradeable for
common package
—8-, 16-, 32-, and 64-Mbit densities
Low Power Consumption
— 9 mA typical read current
ETOX™ VIII (0.13
µm)
Flash
Technology
—16-Mbit and 32-Mbit densities
Absolute Hardware-Protection
— V
PP
= GND option
— V
CC
lockout voltage
ETOX™ VII (0.18
µm)
Flash Technology
—16-, 32-, and 64-Mbit densities
Extended Temperature Operation
— –40 °C to +85 °C
ETOX ™ VI (0.25µm) Flash Technology
—8-, 16-, and 32-Mbit densities
Automated Program and Block Erase
— Status registers
Bo not use the x8 option for new designs
The Intel
®
Advanced Boot Block Flash Memory (B3) device, manufactured on the Intel 0.13
µm
and 0.18
µm
technologies, is a feature-rich solution at a low system cost. The B3 device in x16 is
available in 48-lead TSOP and 48-ball CSP packages. The x8 option of this product family is
available only in 40-lead TSOP and 48-ball µBGA* packages. For additional information about
this product family, see the Intel website:
http://www.intel.com/design/flash.
Notice:
This specification is subject to change without notice. Verify with your local Intel sales
office that you have the latest datasheet before finalizing a design.
Order Number: 290580, Revision: 020
18 Aug 2005

GE28F008B3TA70 Related Products

GE28F008B3TA70 JS28F160B3BD70 JS28F160B3TA70 GE28F160B3BC90 PH28F160B3BD70 PH28F160B3TD70
Description Flash, 1MX8, 70ns, PBGA46, VFBGA-46 Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, TSOP-48 Flash, 1MX16, 70ns, PDSO48, 12 X 20 MM, LEAD FREE, TSOP-48 Flash, 1MX16, 90ns, PBGA48, VFBGA-48 Flash, 1MX16, 70ns, PBGA48, LEAD FREE, VFBGA-48 Flash, 1MX16, 70ns, PBGA48, LEAD FREE, VFBGA-48
Is it Rohs certified? incompatible conform to conform to incompatible conform to conform to
Parts packaging code BGA TSOP TSOP BGA BGA BGA
package instruction VFBGA-46 12 X 20 MM, LEAD FREE, TSOP-48 12 X 20 MM, LEAD FREE, TSOP-48 VFBGA-48 LEAD FREE, VFBGA-48 LEAD FREE, VFBGA-48
Contacts 46 48 48 48 48 48
Reach Compliance Code unknown compli compli compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 70 ns 70 ns 70 ns 90 ns 70 ns 70 ns
Other features TOP BOOT BLOCK BOTTOM BOOT BLOCK TOP BOOT BLOCK BOTTOM BOOT BLOCK BOTTOM BOOT BLOCK TOP BOOT BLOCK
startup block TOP BOTTOM TOP BOTTOM BOTTOM TOP
command user interface YES YES YES YES YES YES
Data polling NO NO NO NO NO NO
JESD-30 code R-PBGA-B46 R-PDSO-G48 R-PDSO-G48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48
JESD-609 code e0 e3 e3 e0 e1 e1
length 7.91 mm 18.4 mm 18.4 mm 7.286 mm 7.286 mm 7.286 mm
memory density 8388608 bit 16777216 bi 16777216 bi 16777216 bit 16777216 bit 16777216 bit
Memory IC Type FLASH FLASH FLASH FLASH FLASH FLASH
memory width 8 16 16 16 16 16
Number of functions 1 1 1 1 1 1
Number of departments/size 8,15 8,31 8,31 8,31 8,31 8,31
Number of terminals 46 48 48 48 48 48
word count 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000 1000000 1000000 1000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
organize 1MX8 1MX16 1MX16 1MX16 1MX16 1MX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code VFBGA TSSOP TSSOP VFBGA VFBGA VFBGA
Encapsulate equivalent code BGA45,6X8,30 TSSOP48,.8,20 TSSOP48,.8,20 BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, VERY THIN PROFILE, FINE PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 260 240 260 260
power supply 1.8/3.6,3/3.3 V 1.8/3.3,3/3.3 V 1.8/3.3,3/3.3 V 1.8/3.3,3/3.3 V 1.8/3.3,3/3.3 V 1.8/3.3,3/3.3 V
Programming voltage 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1 mm 1.2 mm 1.2 mm 1 mm 1 mm 1 mm
Department size 8K,64K 4K,32K 4K,32K 4K,32K 4K,32K 4K,32K
Maximum standby current 0.000005 A 0.000005 A 0.000005 A 0.000005 A 0.000005 A 0.000005 A
Maximum slew rate 0.055 mA 0.055 mA 0.055 mA 0.055 mA 0.055 mA 0.055 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) MATTE TIN MATTE TIN Tin/Lead (Sn/Pb) TIN SILVER COPPER TIN SILVER COPPER
Terminal form BALL GULL WING GULL WING BALL BALL BALL
Terminal pitch 0.75 mm 0.5 mm 0.5 mm 0.75 mm 0.75 mm 0.75 mm
Terminal location BOTTOM DUAL DUAL BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED 40 40 30 40 40
switch bit NO NO NO NO NO NO
type NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE NOR TYPE
width 6.5 mm 12 mm 12 mm 6.964 mm 6.964 mm 6.964 mm
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