B25H2S100DL datasheet, PDF - EEWORLD Datasheet

B25H2S100DL: DescriptionSilicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 Element, POWER MODULE-6; CategoryAnalog mixed-signal IC Trigger device; File Size224KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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B25H2S100DL Overview

Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 Element, POWER MODULE-6

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	MODULE
package instruction	FLANGE MOUNT, R-PUFM-X6
Contacts	6
Reach Compliance Code	compliant
Shell connection	ISOLATED
Nominal circuit commutation break time	110 µs
Configuration	SEPARATE, 2 ELEMENTS
Maximum DC gate trigger current	60 mA
Maximum DC gate trigger voltage	2 V
Quick connection description	2A-2G-2K
Description of screw terminals	0
Maximum holding current	100 mA
JESD-30 code	R-PUFM-X6
JESD-609 code	e0
Maximum leakage current	10 mA
On-state non-repetitive peak current	410 A
Number of components	2
Number of terminals	6
Maximum on-state current	25000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	40 A
Maximum repetitive peak off-state leakage current	10000 µA
Off-state repetitive peak voltage	1000 V
Repeated peak reverse voltage	1000 V
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	UNSPECIFIED
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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