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B25H2S60

Description
Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element, POWER MODULE-6
CategoryAnalog mixed-signal IC    Trigger device   
File Size224KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

B25H2S60 Overview

Silicon Controlled Rectifier, 40A I(T)RMS, 25000mA I(T), 600V V(DRM), 600V V(RRM), 2 Element, POWER MODULE-6

B25H2S60 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-PUFM-X6
Contacts6
Reach Compliance Codecompliant
Shell connectionISOLATED
Nominal circuit commutation break time110 µs
ConfigurationSEPARATE, 2 ELEMENTS
Critical rise rate of minimum off-state voltage300 V/us
Maximum DC gate trigger current60 mA
Maximum DC gate trigger voltage2 V
Quick connection description2G
Description of screw terminals2A-2K
Maximum holding current100 mA
JESD-30 codeR-PUFM-X6
JESD-609 codee0
Maximum leakage current10 mA
On-state non-repetitive peak current410 A
Number of components2
Number of terminals6
Maximum on-state current25000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current40 A
Maximum repetitive peak off-state leakage current10000 µA
Off-state repetitive peak voltage600 V
Repeated peak reverse voltage600 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
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