IRHI7460SEPBF datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> IRHI7460SEPBF

IRHI7460SEPBF: DescriptionPower Field-Effect Transistor, 20.1A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA; CategoryDiscrete semiconductor The transistor; File Size35KB，4 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

IRHI7460SEPBF Overview

Power Field-Effect Transistor, 20.1A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA

IRHI7460SEPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant
Configuration	SINGLE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	20.1 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-259AA
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	300 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

Preview

Download Datasheet

View All

Provisional Data Sheet No. PD-9.1224A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET TRANSISTOR

IRHI7460SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

500 Volt, 0.32Ω, (SEE) RAD HARD HEXFET

Ω

International Rectifier’s (SEE) RAD HARD technol-

ogy HEXFETs demonstrate virtual immunity to SEE

failure. Additionally, under

identical

pre- and post-ra-

diation test conditions, International Rectifier’s RAD

HARD HEXFETs retain

identical

electrical specifica-

tions up to 1 x 10

Rads (Si) total dose. No compen-

sation in gate drive circuitry is required. These devices

are also capable of surviving transient ionization

pulses as high as 1 x 10

Rads (Si)/Sec, and return

to normal operation within a few microseconds. Since

the SEE process utilizes International Rectifier’s pat-

ented HEXFET technology, the user can expect the

highest quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the

well-established advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high-energy pulse circuits

in space and weapons environments.

Product Summary

Part Number

IRHI7460SE

DSS

500V

DS(on)

0.32Ω

20A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Ceramic Eyelets

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25°C

I D @ VGS = 12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

I AR

EAR

dv/dt

TSTG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

Pre-Radiation

IRHI7460SE

300

2.4

±20

500

3.5

-55 to 150

300 (0.063 in. (1.6mm) from

case for 10 sec.)

10.9 (typical)

Units

W/K

V/ns

IRHI7460SEPBF Related Products

	IRHI7460SEPBF
Description	Power Field-Effect Transistor, 20.1A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compliant
Configuration	SINGLE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	20.1 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-259AA
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	300 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

Recommended Resources

Universal inverter main circuit

Temperature measurement nonlinear calibration circuit

Three-phase alternating current phase misalignment and phase loss detection circuit

uPC1470H DC motor speed stabilizing circuit

555 light off reminder circuit

Inverter circuit 6

TI.com Online Purchasing Special (Smart Building) has a limited time offer, with discounts as low as 30%!: TI.com is a convenient and direct shopping experience. Here, you can get a large number of genuine products in stock and enjoy great online prices*. From the early design stage to the mass production ...; arui1999 TI Technology Forum

What went wrong with this practice compilation?: This program is very simple and there is no problem in compiling and running it on the target board. #include "msp430x14x.h" ;The first program I wrote ;NAME main;Module name definitionPUBLIC main;Glo...; ywb888 Microcontroller MCU

I share a small program: using CPLD to scan the key matrix: A few days ago, there was a discussion about buttons. I have a small program that uses CPLD to scan the button matrix. I would like to share it with you. Let me briefly explain this program. The progr...; kata MCU

Does this count as normalizing the current sampling?: Ifb = ((AdcResult.ADCRESULT1<<12) - _IQ(0.5))<<1; //Current sampling value is (-0.5～0.5)*2 becomes -1～+1...; 张锋 Microcontroller MCU

Forward: Why did I leave ARM and join MIPS?　: The author of this article is Fei Zeping, former technical marketing manager of ARM.When I submitted my resignation letter a few weeks ago, many friends expressed their understanding. They all knew th...; itneers Talking about work

Play with pyboardCN V2 - Comparison with Nano board: [i=s]This post was last edited by lehuijie on 2018-6-28 23:28[/i] I received the board two or three days ago. I started writing the review late because I had something to do recently. Thanks to d for ...; lehuijie MicroPython Open Source section

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components