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IRL2703-003

Description
Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size113KB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRL2703-003 Overview

Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IRL2703-003 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)24 A
Maximum drain-source on-resistance0.04 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 9.1359A
IRL2703
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 30V
G
S
R
DS(on)
= 0.04Ω
I
D
= 24A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
24
17
96
45
0.30
±16
77
14
4.5
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
3.3
––––
62
Units
°C/W
8/27/97
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