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IRL2910-002

Description
Power Field-Effect Transistor, 48A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size2MB,9 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

IRL2910-002 Overview

Power Field-Effect Transistor, 48A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IRL2910-002 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)48 A
Maximum drain-source on-resistance0.026 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 94993
IRL2910PbF
Lead-Free
www.irf.com
1
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