StrongIRFET™
IRL40B212
IRL40S212
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery
powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Optimized
for Logic Level Drive
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
RoHS Compliant, Halogen-Free
G
Gate
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max
I
D (Silicon Limited)
40V
1.5m
1.9m
254A
195A
G
S
I
D (Package Limited)
D
S
D
G
TO-220AB
IRL40B212
S
G
D
2
-Pak
IRL40S212
D
Drain
S
Source
Base part number
IRL40B212
IRL40S212
Package Type
TO-220
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel
800
Orderable Part Number
IRL40B212
IRL40S212
RDS(on), Drain-to -Source On Resistance (m
)
6
ID = 100A
5
300
250
ID, Drain Current (A)
Limited By Package
4
3
2
1
0
2
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 125°C
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On– Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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IRL40B212/IRL40S212
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Max.
254
179
195
990 *
231
1.5
± 20
Units
A
W
W/°C
V
°C
Absolute Maximum Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
-55 to + 175
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
E
AS (Thermally limited)
342
Single Pulse Avalanche Energy
790
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
E
AR
T
STG
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Case-to-Sink, Flat Greased Surface
R
CS
Junction-to-Ambient
R
JA
Junction-to-Ambient (PCB Mount)
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Notes:
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Typ.
–––
0.50
–––
–––
Max.
0.65
–––
62
40
mJ
A
mJ
Units
°C/W
Min.
40
–––
–––
–––
1.0
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.03 –––
1.5
1.9
1.9
2.4
–––
2.4
–––
1.0
––– 150
––– 100
––– -100
1.6
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 2mA
V
GS
= 10V, I
D
= 100A
m
V
GS
= 4.5V, I
D
= 50A
V
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 40 V, V
GS
= 0V
µA
V
DS
= 40V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Calculated
continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited
by T
Jmax
, starting T
J
= 25°C, L = 0.07mH, R
G
= 50, I
AS
= 100A, V
GS
=10V.
I
SD
100A, di/dt
950A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
R
is measured at T
J
approximately 90°C.
When mounted
on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 40A, V
GS
=10V.
* Pulse drain current is limited at 780A by source bonding technology.
2
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IRL40B212/IRL40S212
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
Min.
256
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
91
25
46
45
39
154
88
84
8320
1050
790
1250
1580
Max. Units
Conditions
–––
S V
DS
= 10V, I
D
= 100A
137
I
D
= 100A
–––
V
DS
= 20V
nC
–––
V
GS
= 4.5V
–––
–––
V
DD
= 20V
I
D
= 30A
–––
ns
–––
R
G
= 2.7
V
GS
= 4.5V
–––
–––
–––
–––
–––
–––
V
GS
= 0V
V
DS
= 25V
pF
ƒ = 1.0MHz, See Fig.7
V
GS
= 0V, VDS = 0V to 32V
V
GS
= 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
6.0
30
32
26
28
1.4
Max. Units
254
A
990*
1.2
–––
–––
–––
–––
–––
–––
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
G
S
T
J
= 25°C,I
S
= 100A,V
GS
= 0V
T
J
= 25°C
V
DD
= 34V
V/ns T
J
= 175°C,I
S
= 100A,V
DS
= 40V
T
J
= 125°C
I
F
= 100A,
T
J
= 25°C di/dt = 100A/µs
nC
T
J
= 125°C
A T
J
= 25°C
ns
3
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April 27, 2015
1000
TOP
VGS
15V
10V
8.0V
6.0V
4.5V
4.0V
3.75V
3.25V
IRL40B212/IRL40S212
1000
TOP
VGS
15V
10V
8.0V
6.0V
4.5V
4.0V
3.75V
3.25V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
3.25V
BOTTOM
100
3.25V
100
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 100A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
T J = 25°C
VDS = 10V
60µs PULSE WIDTH
10
1
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14
ID = 100A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
C, Capacitance (pF)
10000
Ciss
Coss
Crss
VDS= 32V
VDS= 20V
VDS= 8V
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
250
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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Fig 8.
Typical Gate Charge vs.Gate-to-Source Voltage
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April 27, 2015
1000
IRL40B212/IRL40S212
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
ISD, Reverse Drain Current (A)
100
Limited by Package
10
1msec
100
T J = 175°C
T J = 25°C
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
DC
VGS = 0V
10
0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
0.1
10
100
VDS, Drain-toSource Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.9
0.8
50
Id = 2.0mA
48
0.7
0.6
Energy (µJ)
-60 -40 -20 0
20 40 60 80 100 120 140 160
46
0.5
0.4
0.3
44
42
0.2
0.1
40
T J , Temperature ( °C )
0.0
-5
0
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m
)
Fig 12.
Typical C
oss
Stored Energy
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
VGS = 3.5V
VGS = 4.5V
VGS = 6.0V
VGS = 8.0V
VGS = 10V
Fig 13.
Typical On– Resistance vs. Drain Current
5
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April 27, 2015
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