PD-97192C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.2)
Product Summary
Part Number
IRHNM57110
IRHNM53110
Radiation Level R
DS(on)
100K Rads (Si) 0.22Ω
300K Rads (Si) 0.22Ω
IRHNM57110
JANSR2N7503U8
100V, N-CHANNEL
REF: MIL-PRF-19500/743
5
TECHNOLOGY
I
D
QPL Part Number
6.9A JANSR2N7503U8
6.9A JANSF2N7503U8
SMD-0.2
(METAL LID)
Refer to Page 10 for 1 Additional Part Number -
IRHNMC57110 (Ceramic Lid)
International Rectifier’s R5
TM
technology provides high
performance power MOSFETs for space applications. These
devices have been characterized for Single Event Effects
(SEE) with useful performance up to an LET of 80 (MeV/
(mg/cm
2
)). The combination of low R
DS(on)
and low gate
charge reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Complimentary P-Channel Available -
IRHNM597110, IRHNMC597110
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
6.9
4.4
27.6
23
0.18
±20
24
6.9
2.3
11.5
-55 to 150
300 (for 5s)
0.25 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
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1
02/06/12
IRHNM57110, JANSR2N7503U8
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆V
GS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
100
—
—
2.0
—
3.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.13
—
—
-7.5
—
—
—
—
—
—
—
—
—
—
—
—
6.8
378
108
2.3
8.0
—
—
0.22
4.0
—
—
10
25
100
-100
15
4.0
5.0
6.6
5.4
34
15
—
—
—
—
V
V/°C
Ω
V
mV/°C
S
µA
nA
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 4.4A
Ã
VDS = VGS, ID = 1.0mA
VDS = 15V, IDS = 4.4A
Ã
VDS= 80V ,VGS = 0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 6.9A
VDS = 50V
VDD = 50V, ID = 6.9A,
VGS = 12V, RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Ciss
C oss
C rss
Rg
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
nC
ns
nH
pF
Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 100KHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
6.9
27.6
1.2
144
633
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 6.9A, VGS = 0V
Tj = 25°C, IF = 6.9A, di/dt
≤
100A/µs
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
5.4
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Pre-Irradiation
Radiation Characteristics
IRHNM57110, JANSR2N7503U8
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capabil-
ity. The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source On-state
Resistance (SMD-0.2)
Diode Forward Voltage
Up to 300K Rads (Si)
1
Min
100
2.0
—
—
—
—
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 80V, V
GS
= 0V
V
GS
= 12V, I
D
= 4.4A
V
GS
= 12V, I
D
= 4.4A
V
GS
= 0V, I
D
= 6.9A
—
4.0
100
-100
10
0.226
0.22
1.2
—
—
1. Part Numbers IRHNM57110, IRHNM53110. Additional part numbers ae listed on page 10.
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm ))
38 ± 5%
61 ± 5%
84 ± 5%
2
Energy
(MeV)
300 ± 7.5%
330 ± 7.5%
350 ± 10%
Range
(µm)
38 ± 7.5%
31 ± 10%
28 ± 7.5%
@VGS =
@VGS =
VDS (V)
@VGS =
@VGS =
@VGS =
0V
100
100
100
-5V
100
100
100
-10V
100
100
80
-15V
100
35
25
-20V
100
25
-
120
100
80
60
40
20
0
0
-5
-10
Bias VGS (V)
-15
-20
Bias VDS (V)
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNM57110, JANSR2N7503U8
Pre-Irradiation
100
TOP
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
5.0V
5.0V
1
1
0.1
0.1
1
20µs PULSE WIDTH
Tj = 25°C
10
100
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
ID, Drain-to-Source Current (A)
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 6.9A
2.0
T J = 150°C
10
1.5
1.0
VDS = 50V
20µs PULSE WIDTH
15
1.0
5
7
9
11
13
15
VGS, Gate-to-Source Voltage (V)
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHNM57110, JANSR2N7503U8
RDS(on), Drain-to -Source On Resistance (
Ω)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
4
6
8
T J = 25°C
10
12
T J = 150°C
ID = 6.9A
RDS(on), Drain-to -Source On Resistance (
Ω)
1.6
0.8
0.6
T J = 150°C
0.4
T J = 25°C
0.2
Vgs = 12V
0
0
2
4
6
8
10
12
14
16
ID, Drain Current (A)
14
16
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs
Gate Voltage
Fig 6.
Typical On-Resistance Vs
Drain Current
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
140
4
130
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
3
120
2
110
1
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
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