OM6009SM datasheet, PDF - EEWORLD Datasheet

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OM6009SM: DescriptionPower Field-Effect Transistor, 22A I(D), 100V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SURFACE MOUNT PACKAGE-28; CategoryDiscrete semiconductor The transistor; File Size12KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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OM6009SM Overview

Power Field-Effect Transistor, 22A I(D), 100V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SURFACE MOUNT PACKAGE-28

OM6009SM Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	CHIP CARRIER, S-CQCC-N28
Contacts	28
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	22 A
Maximum drain-source on-resistance	0.095 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-CQCC-N28
JESD-609 code	e0
Number of components	1
Number of terminals	28
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	36 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	QUAD
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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OM6009SM OM6011SM

OM6010SM OM6012SM

POWER MOSFETS IN HERMETIC ISOLATED

SURFACE MOUNT PACKAGE

100 V Thru 500V, Up To 22 Amp, N-Channel

MOSFET In Hermetic Surface Mount Package

FEATURES

•

Isolated Hermetic Metal Package

Fast Switching

Low R

DS(on)

Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels

Ceramic Package

DESCRIPTION

This series of hermetically packaged surface mount products feature the latest

advanced MOSFET and packaging technology. They are ideally suited for Military

requirements where small size, high performance and high reliability are required,

and in applications such as switching power supplies, motor controls, inverters,

choppers, audio amplifiers and high energy pulse circuits.

MAXIMUM RATINGS

@ 25°C

PART NUMBER

OM6009SM

OM6010SM

OM6011SM

OM6012SM

V

DS

100V

200V

400V

500V

R

DS(ON)

.095

.18

.60

.85

I

D(MAX)

22A

18A

10A

8A

3.1

SCHEMATIC

For additional test conditions and limits, see Sect. 3.5 pg. 3.5 - 77.

4 11 R0

3.1 - 83

OM6009SM Related Products

	OM6009SM	OM6009SMVPBF	OM6010SM	OM6010SMV	OM6011SM	OM6011SMT	OM6012SMV
Description	Power Field-Effect Transistor, 22A I(D), 100V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SURFACE MOUNT PACKAGE-28	Power Field-Effect Transistor, 22A I(D), 100V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SURFACE MOUNT PACKAGE-28	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SURFACE MOUNT PACKAGE-28	Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SURFACE MOUNT PACKAGE-28	Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SURFACE MOUNT PACKAGE-28	Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SURFACE MOUNT PACKAGE-28	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL, SURFACE MOUNT PACKAGE-28
Is it lead-free?	Contains lead	Lead free	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	conform to	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	CHIP CARRIER, S-CQCC-N28	CHIP CARRIER, S-CQCC-N28	CHIP CARRIER, S-CQCC-N28	CHIP CARRIER, S-CQCC-N28	CHIP CARRIER, S-CQCC-N28	CHIP CARRIER, S-CQCC-N28	CHIP CARRIER, S-CQCC-N28
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	200 V	200 V	400 V	400 V	500 V
Maximum drain current (ID)	22 A	22 A	18 A	18 A	10 A	10 A	8 A
Maximum drain-source on-resistance	0.095 Ω	0.095 Ω	0.18 Ω	0.18 Ω	0.6 Ω	0.6 Ω	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-CQCC-N28	S-CQCC-N28	S-CQCC-N28	S-CQCC-N28	S-CQCC-N28	S-CQCC-N28	S-CQCC-N28
Number of components	1	1	1	1	1	1	1
Number of terminals	28	28	28	28	28	28	28
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	235	260	235	235	235	235	235
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	30	40	30	30	30	30	30
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
ECCN code	EAR99	EAR99	EAR99	EAR99	-	-	-
JESD-609 code	e0	-	e0	e0	e0	e0	e0
Maximum pulsed drain current (IDM)	36 A	36 A	29 A	29 A	-	-	-
Terminal surface	TIN LEAD	-	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD

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