SSQ5N50
Elektronische Bauelemente
4.5A, 500V, R
DS(ON)
1500mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
D
C
TO-220P
FEATURES
Low R
DS(on)
Technology.
Low thermal impedance.
Fast switching speed.
G
B
R
E
A
T
S
APPLICATIONS
Electronic ballast.
Electronic transformer
Switch mode power supply.
F
H
I
J
K
L
X
M
U
P
N
O
V
Q
1 2 3
Q
W
Dimensions in millimeters
Drain
REF.
A
B
C
D
E
F
G
H
J
K
L
M
Gate
Source
Millimeter
Min.
Max.
7.90
8.10
9.45
9.65
9.87
10.47
-
11.50
1.06
1.46
2.60
3.00
6.30
6.70
8.35
8.75
1.60 Typ.
1.10
1.30
1.17
1.37
-
1.50
REF.
N
O
P
Q
R
S
T
U
V
W
X
Millimeter
Min.
Max.
0.75
0.95
0.66
0.86
13.50
14.50
2.44
3.44
3.50
3.70
1.15
1.45
4.30
4.70
-
2.7
1.89
3.09
0.40
0.60
2.60
3.60
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Total Power Dissipation
1
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-Ambient
1
Maximum Thermal Resistance Junction-Case
Notes：
1
Package Limited.
2
Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
V
DS
V
GS
I
D
@T
C
=25℃
I
DM
I
S
P
D
@T
C
=25℃
T
J
, T
STG
R
θJA
R
θJC
500
±20
4.5
18
4.5
74
-55 ~ 175
62.5
1.7
THERMAL RESISTANCE RATINGS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
02-Dec-2010 Rev.A
Page 1 of 4
SSQ5N50
Elektronische Bauelemente
4.5A, 500V, R
DS(ON)
1500mΩ
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
SYMBO MIN. TYP. MAX. UNIT
Static
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
fs
V
SD
2
-
-
-
5
-
-
-
-
-
-
-
-
-
2.5
1.6
4
±100
25
250
-
1500
-
-
V
nA
μA
A
mΩ
S
V
TEST CONDITIONS
V
DS
= V
GS,
I
D
= 250
μA
V
DS
= 0V, V
GS
= ±20V
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V,
V
GS
= 0V, T
J
=125°C
V
DS
= 10V, V
GS
= 10V
V
GS
= 10V, I
D
= 2.7 A
V
DS
= 50V, I
D
= 2.7 A
I
S
= 4.5 A, V
GS
= 0 V
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
ISS
C
OSS
C
RSS
-
-
-
-
-
-
-
-
-
-
26
4
15
12.8
7.4
38
19.6
623
112
24
-
-
-
-
-
-
-
-
-
-
pF
nS
nC
V
DS
= 400 V
V
GS
= 10 V
I
D
= 3.1 A
V
DD
= 250 V
I
D
= 3.1 A
V
GEN
= 10 V
R
L
= 79
R
GEN
= 12
V
DS
= 25 V
V
GS
= 0 V
f = 1MHz
Notes
1
Pulse test：Pulse width
≦
300
μs,
duty cycle
≦
2％.
2
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
02-Dec-2010 Rev.A
Page 2 of 4
SSQ5N50
Elektronische Bauelemente
4.5A, 500V, R
DS(ON)
1500mΩ
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
02-Dec-2010 Rev.A
Page 3 of 4
SSQ5N50
Elektronische Bauelemente
4.5A, 500V, R
DS(ON)
1500mΩ
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
02-Dec-2010 Rev.A
Page 4 of 4
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