STT3457P
Elektronische Bauelemente
-4 A, -30 V, R
DS(ON)
60 m
P-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize
a high cell density trench process to provide Low R
DS(on)
and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
F
A
E
6
5
4
TSOP-6
L
B
1
2
3
FEATURES
C
K
H
J
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe TSOP-6
saves board space.
Fast switching speed
High performance trench technology
DG
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
TSOP-6
MPQ
3K
LeaderSize
7’ inch
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
D
D
D
D
G
S
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Symbol
V
DS
V
GS
T
A
= 25
°C
T
A
= 70
°C
Ratings
-30
±20
-4
-3.2
-20
-1.7
2
1.3
-55 ~ 150
62.5
110
Unit
V
V
A
A
A
W
°C
I
D
I
DM
I
S
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Operating Junction and Storage Temperature Range
Maximum Junction to Ambient
1
T
A
= 25
°C
T
A
= 70
°C
P
D
Tj, Tstg
Thermal Resistance Ratings
t
≦
5 sec
Steady State
R
JA
°C
/ W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 1 of 4
STT3457P
Elektronische Bauelemente
-4 A, -30 V, R
DS(ON)
60 m
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
V
GS(th)
I
GSS
I
DSS
I
D(on)
-1
-
-
-
-20
-
Drain-Source On-Resistance
1
R
DS(ON)
-
-
Forward Transconductance
1
Diode Forward Voltage
g
fs
V
SD
-
-
-
-
-
-
-
-
-
-
10
-0.8
-
±100
-1
μA
-5
-
60
50
75
-
-
S
V
mΩ
A
V
nA
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 0V, V
GS
= ±8V
V
DS
= -16V, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V, T
J
= 55°C
V
DS
= -5V, V
GS
= -4.5V
V
GS
= -4.5V, I
D
= -4.0A,T
J
= 55°C
V
GS
= -10V, I
D
= -4.0A
V
GS
= -4.5V, I
D
= -3.4A
V
DS
= -5V, I
D
= -3.4A
I
S
= 1.3A, V
GS
= 0V
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
6.4
2
3.8
7
10
30
22
-
-
-
-
-
nS
-
-
V
DD
= -20V, V
GEN
= -10V,
R
L
= 6, I
D
= -1A
nC
V
DS
= -20V, V
GS
= -5V,
I
D
= -4.0A
Notes:
1. Pulse test：PW
≦
300 us duty cycle
≦
2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 2 of 4
STT3457P
Elektronische Bauelemente
-4 A, -30 V, R
DS(ON)
60 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 3 of 4
STT3457P
Elektronische Bauelemente
-4 A, -30 V, R
DS(ON)
60 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
06-Jan-2011 Rev. A
Page 4 of 4
Analogue and Mixed Signal
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