UMD3N
Elektronische Bauelemente
NPN-PNP built-in resistors
Multi-Chip Digital Transistor
SOT-363
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
4
8
o
0
o
Features
* DTA114E and DTC114E transistors are
built-in a SOT-363 package.
* Transistor elements are independent,
eliminating interference.
* Mounting cost and area can be cut in half.
(3)
(2)
R
1
R
2
DT r
1
DT r
2
R
2
R
1
(4)
(5)
(6)
(1)
6
5
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
1
2
3
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
MARKING:D3
R
1
=R
2
=10K
Dimensions in inches and (millimeters)
Electrical Characteristics( Tamb=25 C unless otherwise specified)
O
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
O
I
C(MAX)
Pd
Tj
Tstg
Limits
50
-10~40
50
100
150(TOTAL)
150
-55~150
Unit
V
V
mA
mW
℃
℃
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
30
7
0.8
10
1
250
13
1.2
MHz
V
CE
=10V ,I
E
=-5mA,f=100MHz
KΩ
3
0.3
0.88
0.5
Min.
Typ
Max.
0.5
Unit
V
V
mA
µA
Conditions
V
CC
=5V ,I
O
=100μA
V
O
=0.3V ,I
O
=10mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V, V
I
=0
V
O
=5V,I
O
=5mA
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page 1 of
2
UMD3N
Elektronische Bauelemente
DTr
1
(NPN)
100
50
V
O
=0.3V
NPN-PNP built-in resistors
Multi-Chip Digital Transistor
10m
5m
OUTPUT CURRENT : Io
(A)
V
CC
=5V
1k
500
DC CURRENT GAIN : G
I
V
O
=5V
Ta=100˚C
25˚C
−40˚C
INPUT VOLTAGE : V
I (on)
(V)
20
10
5
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
Ta=−40˚C
25˚C
100˚C
2m
1m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
Ta=100˚C
25˚C
−40˚C
200
100
50
20
10
5
2
0.5
1
1.5
2
2.5
3
1
100µ 200µ 500µ1m 2m
5m 10m 20m 50m100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
500m
OUTPUT VOLTAGE : V
O (on)
(V)
Fig.3 DC current gain vs. output
current
l
O
/l
I
=20
Ta=100˚C
25˚C
−40˚C
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output
current
DTr
2
(PNP)
−100
−50
V
O
=−0.3V
−10m
−5m
OUTPUT CURRENT : Io
(A)
1k
V
CC
=−5V
V
O
=−5V
INPUT VOLTAGE : V
I (on)
(V)
−10
−5
−2
−1
Ta=−40˚C
25˚C
100˚C
−1m
−500µ
−200µ
−100µ
−50µ
−20µ
−10µ
−5µ
−2µ
−1µ
0
DC CURRENT GAIN : G
I
−20
−2m
Ta=100˚C
25˚C
−40˚C
500
200
100
50
20
10
5
2
Ta=100˚C
25˚C
−40˚C
−500m
−200m
−100m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
−0.5
−1
−1.5
−2
−2.5
−3
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.5 Input voltage vs. output current
(ON characteristics)
Fig.6 Output current vs. input voltage
(OFF characteristics)
−1
−500m
Fig.7 DC current gain vs. output
current
l
O
/l
I
=20
Ta=100˚C
25˚C
−40˚C
OUTPUT VOLTAGE : V
O (on)
(V)
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
OUTPUT CURRENT : I
O
(A)
Fig.8 Output voltage vs. output
current
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page
2
of
2
京公网安备 11010802033920号
EEWORLD
