UMD6N
Elektronische Bauelemente
Dual NPN+PNP Digital Transistors
(Built-in Resistors)
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
DTA143T(PNP) and DTC143T(NPN) transistors
are built-in a package.
Transistor elements are independent, eliminating
interference.
Mounting cost and area can be cut in half.
SOT-363
A
E
L
EQUIVALENT CIRCUIT
F
DG
B
C
K
H
J
REF.
A
B
C
D
E
F
MARKING：D6
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
0.15
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction & Storage temperature
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
P
C
T
J
, T
STG
Value
50
50
5
100
150
150, -55 ~ 150
Unit
V
V
V
mA
mW
℃
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
Min.
50
50
5
-
-
-
100
3.29
-
Typ.
-
-
-
-
-
-
-
4.7
250
Max.
-
-
-
0.5
0.5
0.3
600
6.11
-
Unit
V
V
A
A
V
Test Conditions
I
C
= 50A
I
C
= 1mA
I
E
= 50A
V
CB
= 50V
V
EB
= 4V
I
C
= 5mA, I
B
= 0.25mA
V
CE
= 5V, I
C
= 1mA
K
MHz
V
CE
= 10V, I
E
= -5mA,
f=100MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Jun-2010 Rev. A
Page 1 of 2
UMD6N
Elektronische Bauelemente
Dual NPN+PNP Digital Transistors
(Built-in Resistors)
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
30-Jun-2010 Rev. A
Page 2 of 2
Embedded System
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