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UMH9N

Description
NPN Multi-Chip Built-in Resistors Transistor
CategoryDiscrete semiconductor    The transistor   
File Size392KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric View All

UMH9N Overview

NPN Multi-Chip Built-in Resistors Transistor

UMH9N Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Is SamacsysN
Base Number Matches1
UMH9N
Elektronische Bauelemente
RoHS Compliant Product
NPN Multi-Chip
Built-in Resistors Transistor
SOT-363
.055(1.40)
.047(1.20)
.026TYP
(0.65TYP)
.021REF
(0.525)REF
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
8
o
0
o
*
Features
* Mounting possible with 3automatic mounting
machines.
* Transistor elements are independent,
eliminating interference.
* Mounting cost and area can be cut in half.
(3)
R
1
Q
1
Q
2
R
2
R
1
(5)
(6)
R1=10K
R2=47K
(2)
R
2
(1)
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
.043(1.10)
.035(0.90)
MARKING:H9
(4)
Dimensions in inches and (millimeters)
Absolute maximum ratings(Ta=25℃)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
O
I
C(MAX)
Pd
Tj
Tstg
Limits
50
-6~40
70
100
150(TOTAL)
150
-55~150
Unit
V
V
mA
mW
Electrical characteristics (Ta=25℃)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
68
7
3.7
10
4.7
250
13
5.7
MHz
V
CE
=10V ,I
E
=-5mA,f=100MHz
KΩ
1.4
0.3
0.88
0.5
Min.
Typ
Max.
0.3
Unit
V
V
mA
µA
Conditions
V
CC
=5V ,I
O
=100μA
V
O
=0.3V ,I
O
=1 mA
I
O
/I
I
=5mA/0.25mA
V
I
=5V
V
CC
=50V, V
I
=0
V
O
=5V ,I
O
=5mA
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev.
B
Page 1 of
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Index Files: 1699  684  1406  51  2422  35  14  29  2  49 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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