EEWORLDEEWORLDEEWORLD

Part Number

Search

SR10200S

Description
10 Amp Schottky Barrier Rectifiers
CategoryDiscrete semiconductor    diode   
File Size204KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric View All

SR10200S Overview

10 Amp Schottky Barrier Rectifiers

SR10200S Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompli
ECCN codeEAR99
Diode typeRECTIFIER DIODE
SR10200S
Elektronische Bauelemente
Voltage 200 V
10 Amp Schottky Barrier Rectifiers
RoHS compliant product
A suffix of “-C” specifies halogen free
FEATURES
TO-220A
High current capability
High reliability
High surge current capability
Epitaxial construction
Low forward voltage drop
1
B
N
D
E
2
M
3
A
H
O
J
K
L
C
G
F
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 1.933 grams (Approximately)
L
Dimensions in millimeters
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
14.68
15.50
9.7
10.4
13.06
14.62
4.22
4.98
1.14
1.38
2.20
2.98
0.27
0.55
REF.
H
J
K
L
M
N
O
Millimeter
Min.
Max.
3.57
4.03
-
1.30
0.72
0.96
4.84
5.32
2.48
2.98
3.7
3.9
1.12
1.37



MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Parameter
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms single half sine-wave
Superimposed on rated load (JEDEC method)
I
F
=10,T
F
= 25
°
C
Maximum Instantaneous Forward Voltage
I
F
=10,T
F
= 125
°
C
Maximum DC Reverse Current at Rated DC
T
A
= 25
°
C
Blocking Voltage
3
T
A
= 125
°
C
Typical Junction Capacitance
1
Typical Thermal Resistance
2
Operating Temperature Range T
J
Storage Temperature Range T
STG
Notes:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Thermal Resistance Junction to Case.
3.
Pulse test: 300uS pulse width, 2% duty cycle
Symbol
V
RRM
V
RSM
V
DC
I
F
I
FSM
V
F
I
R
C
J
R
JC
T
J
T
STG
Rating
200
200
200
10
180
0.92
0.8
0.02
5
250
4.0
-50~150
-65~175
Unit
V
V
V
A
A
V
mA
pF
°
C / W
°
C
°
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Mar-2011 Rev. A
Page 1 of 2
Reactive components
Can anyone give me a detailed introduction to reactive components? Thank you...
kevin_999 Analog electronics
NCO Megacore
NCO Megacore...
白丁 FPGA/CPLD
Problems with Nand Flash experiment
The code is the Nand Flash experiment of the 2440 development board/*--------------------------------------------- ---------------------/ Function name: ReadPage Function description: Parameters passe...
zzqxieli Embedded System
About the microcomputer principle single chip computer problem
Topic introduction: This design is controlled by a single-chip microcomputer and uses a matrix output, so that the 15-port line of the single-chip microcomputer controls 56 colored lights. Under the c...
gjinzi Embedded System
This week's highlights
[font=微软雅黑][size=3][url=http://www.deyisupport.com/question_answer/w/faq/215.keystone-c66xdsp.aspx]Ultra-detailed resource collection: High-performance multi-core C66X series DSP technology based on K...
eric_wang DSP and ARM Processors

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2255  2505  1236  1116  431  46  51  25  23  9 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号