SSD50N06-15D
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
51A, 60V, R
DS(ON)
13 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-252(D-Pack)
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density
process. Low R
DS(on)
assures minimal power loss and conserves energy,
making this device ideal for use in power management circuitry. Typical
applications are PWM DC-DC converters, power management in portable
and battery-powered products such as computers, printers, battery charger,
telecommunication power system, and telephones power system.
A
B
FEATURES
C
D
Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Miniature TO-252 Surface Mount Package Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter applications
K
GE
HF
PRODUCT SUMMARY
V
DS
(V)
60
PRODUCT SUMMARY
R
DS
(on) m(
13 @V
GS
= 10V
18 @V
GS
= 4.5V
M
J
Millimeter
Min.
Max.
6.4
6.8
5.20
5.50
2.20
2.40
0.45
0.58
6.8
7.3
2.40
3.0
5.40
6.2
0.8
1.20
N
O
P
I
D
(A)
51
44
REF.
REF.
A
B
C
D
E
F
G
H
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.70
0.90
0.50
1.1
0.9
1.6
0
0.15
0.43
0.58
Drain
Gate
Source
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
a
Power Dissipation
a
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-Ambient
a
Maximum Thermal Resistance Junction-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
SYMBOL
V
DS
V
GS
I
D
@T
C
=25℃
I
DM
I
S
P
D
@T
C
=25℃
T
J
, T
STG
R
θJA
R
θJC
THERMAL RESISTANCE RATINGS
RATINGS
60
±20
51
40
30
50
-55 ~ 175
50
3.0
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
27-Sep-2010 Rev. B
Page 1 of 4
SSD50N06-15D
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
51A, 60V, R
DS(ON)
13 mΩ
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT TEST CONDITIONS
Static
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-Resistance
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
1.0
-
-
-
34
-
-
-
-
-
-
-
-
-
-
-
22
1.1
-
±100
1
25
-
13
18
-
-
V
V
DS
= V
GS
, I
D
= 250μA
nA V
DS
= 0V, V
GS
= 20V
V
DS
= 48V, V
GS
= 0V
μA
A
mΩ
S
V
V
DS
= 48V, V
GS
= 0V,
T
J
= 55°C
V
DS
= 5V, V
GS
= 10V
V
GS
= 10V, I
D
= 51A
V
GS
= 4.5V, I
D
= 44A
V
DS
= 15V, I
D
= 51A
I
S
= 24A, V
GS
= 0V
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Change
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
-
-
-
12.5
2.4
2.6
2730
440
180
11
8
19
6
-
-
-
-
-
-
-
-
-
-
V
DD
= 25 V
I
D
= 30 A
nS
R
L
= 25
V
GEN
= 10 V
I
D
= 51 A
nC V
DS
= 15 V
V
GS
= 4.5 V
f = 1MHz
pF V
DS
= 15 V
V
GS
= 0 V
Notes
a. Pulse test： PW
≦
300 us duty cycle
≦
2％.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Sep-2010 Rev. B
Page 2 of 4
SSD50N06-15D
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
51A, 60V, R
DS(ON)
13 mΩ
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Sep-2010 Rev. B
Page 3 of 4
SSD50N06-15D
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
51A, 60V, R
DS(ON)
13 mΩ
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Sep-2010 Rev. B
Page 4 of 4
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