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BSM300GA120DN2

Description
430 A, 1200 V, N-CHANNEL IGBT
CategoryDiscrete semiconductor    The transistor   
File Size234KB,11 Pages
ManufacturerEUPEC [eupec GmbH]
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BSM300GA120DN2 Overview

430 A, 1200 V, N-CHANNEL IGBT

BSM300GA120DN2 Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
package instructionSINGLE SWITCH 1, 4 PIN
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)430 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2500 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsGENERAL PURPOSE SWITCHING
Transistor component materialsSILICON
Nominal off time (toff)680 ns
Nominal on time (ton)210 ns
VCEsat-Max3.2 V
BSM 300 GA 120 DN2
IGBT Power Module
• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 300 GA 120 DN2
BSM 300 GA 120 DN2 S
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
V
CE
I
C
Package
SINGLE SWITCH 1
SSW SENSE 1
Ordering Code
C67076-A2007-A70
C67070-A2017-A70
1200V 430A
1200V 430A
Symbol
V
CE
V
CGR
Values
1200
1200
Unit
V
V
GE
I
C
± 20
A
430
300
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
I
Cpuls
860
600
P
tot
2500
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
+ 150
-40 ... + 125
0.05
0.125
2500
20
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
W
1
Oct-27-1997
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