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BSM300GA170DLC

Description
IGBT-Modules
CategoryDiscrete semiconductor    The transistor   
File Size106KB,9 Pages
ManufacturerEUPEC [eupec GmbH]
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BSM300GA170DLC Overview

IGBT-Modules

BSM300GA170DLC Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
package instructionFLANGE MOUNT, R-XUFM-X4
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)600 A
Collector-emitter maximum voltage1700 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X4
Number of components1
Number of terminals4
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2500 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)930 ns
Nominal on time (ton)200 ns
VCEsat-Max3.2 V
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 300 GA 170 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
2
t - value, Diode
Isolations-Prüfspannung
insulation test voltage
tp = 1 ms
T
C
= 80 °C
T
C
= 25 °C
t
P
= 1 ms, T
C
=80°C
V
CES
I
C,nom.
I
C
I
CRM
1700
300
600
600
V
A
A
A
T
C
=25°C, Transistor
P
tot
2500
W
V
GES
+/- 20V
V
I
F
300
A
I
FRM
600
A
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
2
It
18.000
A
2
s
RMS, f = 50 Hz, t = 1 min.
V
ISOL
3,4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 300A, V
GE
= 15V, T
vj
= 25°C
I
C
= 300A, V
GE
= 15V, T
vj
= 125°C
I
C
= 14mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
V
CE sat
min.
-
-
4,5
typ.
2,6
3,1
5,5
max.
3,2
3,6
6,5
V
V
V
V
GE
= -15V ... +15V
Q
G
-
3,6
-
µC
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
20
-
nF
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
V
CE
= 1700V, V
GE
= 0V, T
vj
= 25°C
V
CE
= 1700V, V
GE
= 0V, T
vj
= 125°C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
C
res
I
CES
-
-
-
1,0
0,1
8
-
-
0,6
nF
mA
mA
I
GES
-
200
nA
prepared by: Regine Mallwitz
approved by: Christoph Lübke; 28.11.2000
date of publication: 28.11.2000
revision: 2 (Series)
1(8)
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