EEWORLDEEWORLDEEWORLD

Part Number

Search

BSM300GB60DLC

Description
375 A, 600 V, N-CHANNEL IGBT
CategoryDiscrete semiconductor    The transistor   
File Size122KB,9 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

BSM300GB60DLC Online Shopping

Suppliers Part Number Price MOQ In stock  
BSM300GB60DLC - - View Buy Now

BSM300GB60DLC Overview

375 A, 600 V, N-CHANNEL IGBT

BSM300GB60DLC Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)375 A
Collector-emitter maximum voltage600 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1250 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)402 ns
Nominal on time (ton)176 ns
VCEsat-Max2.45 V
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM 300 GB 60 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
2
I t - value, Diode
Isolations-Prüfspannung
insulation test voltage
t
P
= 1ms
T
c
= 65°C
T
c
= 25°C
t
P
= 1ms, T
c
= 65°C
V
CES
I
C,nom.
I
C
I
CRM
600
300
375
600
V
A
A
A
T
c
= 25°C, Transistor
P
tot
1250
W
V
GES
+/- 20V
V
I
F
300
A
I
FRM
600
A
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
I
2
t
19.200
As
2
RMS, f= 50Hz, t= 1min.
V
ISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 300A, V
GE
= 15V, T
vj
= 25°C
I
C
= 300A, V
GE
= 15V, T
vj
= 125°C
I
C
= 6mA, V
CE
= V
GE
, T
vj
= 25°C
V
CE sat
min.
-
-
V
GE(th)
4,5
typ.
1,95
2,20
5,5
max.
2,45
-
6,5
V
V
V
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
C
ies
-
13
-
nF
f= 1MHz, T
vj
= 25°C, V
CE
= 25V, V
GE
= 0V
V
CE
= 600V, V
GE
= 0V, T
vj
= 25°C
V
CE
= 600V, V
GE
= 0V, T
vj
= 125°C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
C
res
-
-
-
1,1
2
2
-
-
1000
-
400
nF
µA
mA
nA
I
CES
I
GES
-
prepared by: Andreas Vetter
approved by: Michael Hornkamp
date of publication: 2000-04-26
revision: 1
1 (8)
BSM 300 GB 60 DLC S1
2000-02-08
Why can't I download the information here?
Why can't I download the information here? > Is it because I'm new here/?...
lanlanlanlan Analog electronics
Attending Avnet's ARM seminar, I found that TI M3 is really a great improvement
Today I went to the Beijing International Convention Center to attend the "ARM System Seminar" held by Avnet. It is said that the 1,000 people present were scattered in various small venues. When visi...
向农 Microcontroller MCU
Requires a portable charger
[font=新宋体]I am a video enthusiast. The device consumes 8W. The battery is LiPo 1225mAH. The energy is 14.1Wh. The voltage is 11.55V. I want to make a video camera that can support hot-swappable power ...
疯狂456 Power technology
【TI's First Low Power Design Competition】Fourth Function Demonstration Video
[i=s]This post was last edited by zhanghuichun on 2014-12-2 17:19[/i] This work consists of two parts, one is a smart watch made under STM32MCU (limited by the size of the touch screen, it is a bit la...
zhanghuichun Microcontroller MCU
Can VHDL specify the number of digits assigned?
Can VHDL specify the number of bits to be assigned to a signal like in Verilog (a = 30'd5;)?...
挂在天边的鱼 FPGA/CPLD
Does anyone have a 200-fold frequency division chip? Thank you so much~~~
Dear seniors, I am now working on a project with my teacher. I want to divide the 200M signal into 1M signal. I have searched the Internet for a long time, but I have not found a suitable frequency di...
leizikobe FPGA/CPLD

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 290  1931  574  1029  481  6  39  12  21  10 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号