FP10R12W1T3 datasheet, PDF - EEWORLD Datasheet

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FP10R12W1T3: Description16 A, 1200 V, N-CHANNEL IGBT; CategoryDiscrete semiconductor The transistor; File Size426KB，11 Pages; ManufacturerEUPEC [eupec GmbH]

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FP10R12W1T3 Overview

16 A, 1200 V, N-CHANNEL IGBT

FP10R12W1T3 Parametric

Parameter Name	Attribute value
Maker	EUPEC [eupec GmbH]
package instruction	MODULE-23
Reach Compliance Code	unknow
Shell connection	ISOLATED
Maximum collector current (IC)	16 A
Collector-emitter maximum voltage	1200 V
Configuration	COMPLEX
JESD-30 code	R-XUFM-X23
Number of components	7
Number of terminals	23
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Nominal off time (toff)	540 ns
Nominal on time (ton)	70 ns

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Technische Information / technical information

IGBT-Module

IGBT-modules

FP10R12W1T3

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IGBT-Wechselrichter / IGBT-inverter

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