BG3123...
DUAL N-Channel MOSFET Tetrode
•
Two gain controlled input stages for UHF
and VHF -tuners e.g. (NTSC, PAL)
•
Optimized for UHF (amp. B) and VHF (amp. A)
•
Integrated gate protection diodes
•
High AGC-range, low noise figure, high gain
•
Improved cross modulation at gain reduction
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
4
5
6
1
2
3
BG3123
$
#
"
BG3123R
6
5
4
*
)
!
B
A
1
2
3
Drain
AGC
RF
Input RG1
VGG
G2
G1
RF Output
+ DC
GND
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BG3123
BG3123R
Package
SOT363
SOT363
1=G1* 2=G2
1=G1* 2=S
Pin Configuration
3=D*
3=D*
4=D**
4=D**
5=S
5=G2
Marking
6=G1** KOs
6=G1** KRs
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
1
2007-04-26
BG3123...
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
amp. A
amp. B
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1)
1
For
Symbol
V
DS
I
D
Value
8
25
20
Unit
V
mA
±I
G1/2SM
±V
G1/G2S
P
tot
T
stg
T
ch
Symbol
R
thchs
1
6
200
-55 ... 150
150
V
mW
°C
Value
≤
150
Unit
K/W
calculation of
R
thJA please refer to Application Note Thermal Resistance
2
2007-04-26
BG3123...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Drain-source breakdown voltage
I
D
= 10 µA,
V
G1S
= 0 V,
V
G2S
= 0 V
Gate1-source breakdown voltage
+I
G1S
= 10 mA,
V
G2S
= 0 V,
V
DS
= 0 V
Gate2-source breakdown voltage
+I
G2S
= 10 mA,
V
G1S
= 0 V,
V
DS
= 0 V
Gate1-source leakage current
V
G1S
= 6 V,
V
G2S
= 0 V
Gate2-source leakage current
V
G2S
= 8 V,
V
G1S
= 0 V,
V
DS
= 0 V
Drain current
V
DS
= 5 V,
V
G1S
= 0 V,
V
G2S
= 4.5 V
Drain-source current
V
DS
= 5 V,
V
G2S
= 4 V,
R
G1
= 60 kΩ,
amp. A
V
DS
= 5 V,
V
G2S
= 4 V,
R
G1
= 50 kΩ,
amp. B
Gate1-source pinch-off voltage
V
DS
= 5 V,
V
G2S
= 4 V,
I
D
= 20 µA
Gate2-source pinch-off voltage
V
DS
= 5 V,
I
D
= 20 µA
V
G2S(p)
-
0.6
-
V
G1S(p)
-
-
14
0.7
-
-
V
-
14
-
I
DSX
mA
I
DSS
-
-
10
µA
+I
G2SS
-
-
50
nA
+I
G1SS
-
-
50
µA
+V
(BR)G1SS
+V
(BR)G2SS
6
6
-
-
15
15
V
(BR)DS
12
-
-
V
typ.
max.
Unit
3
2007-04-26
BG3123...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
Forward transconductance
amp. A
amp. B
Gate1 input capacitance
f
= 10 MHz, amp. A
f
= 10 MHz, amp. B
Output capacitance
f
= 10 MHz, amp. A
f
= 10 MHz, amp. B
Power gain
f
= 800 MHz, amp. A
f
= 800 MHz, amp. B
f
= 45 MHz, amp. A
f
= 45 MHz, amp. B
Noise figure
f
= 800 MHz, amp. A
f
= 800 MHz, amp. B
f
= 45 MHz, amp. A
f
= 45 MHz, amp. B
Gain control range
V
G2S
= 4 ... 0 V ,
f
= 800 MHz
Cross-modulation
k=1%, f
w
=50MHz,
f
unw
=60MHz
X
mod
amp.A ,
AGC
= 0 dB
amp. B,
AGC
= 0 dB
amp. A ,
AGC
= 10 dB
amp. B ,
AGC
= 10 dB
amp. A,
AGC
= 40 dB
amp. B,
AGC
= 40 dB
-
90
90
-
-
98
98
96
97
91
94
103
104
-
-
-
-
-
-
∆G
p
F
-
-
-
-
45
1.8
1.8
1.4
1.6
-
-
-
-
-
-
G
p
-
-
-
-
25
24
32
30
-
-
-
-
dB
C
dss
-
-
1.3
1.1
-
-
dB
C
g1ss
-
-
1.9
1.5
-
-
g
fs
-
-
30
25
-
-
pF
typ.
max.
mS
Unit
AC Characteristics
V
DS
= 5V,
V
G2S
= 4V, (I
D
= 14 mA) (verified by random sampling)
4
2007-04-26
BG3123...
Total power dissipation
P
tot
=
ƒ(T
S
)
amp. A
Total power dissipation
P
tot
=
ƒ(T
S
)
amp. B
300
300
mW
mW
P
tot
150
P
tot
120
°C
200
200
150
100
100
50
50
0
0
20
40
60
80
100
150
0
0
20
40
60
80
100
120
°C
150
T
S
T
S
Drain current
I
D
=
ƒ(I
G1
)
V
G2S
= 4V
amp. A
16
mA
Drain current
I
D
=
ƒ(I
G1
)
V
G2S
= 4V
amp. B
16
mA
12
12
I
D
10
I
D
µA
10
8
8
6
6
4
4
2
2
0
0
10
20
30
40
50
70
0
0
10
20
30
40
50
µA
70
I
G1
I
G1
5
2007-04-26
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