BG3430R
DUAL N-Channel MOSFET Tetrode
•
Designed for input stages of
2 band tuners
•
Two AGC amplifiers in one single package
with on-chip internal switch
•
Only one switching line to control both FETs
•
Integrated gate protection diodes
•
High gain, low noise figure, high AGC-range
•
Good cross modulation at gain reduction
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
Detailed functional diagram on page 4
4
5
6
1
2
3
BG3430R
$
#
"
*
)
!
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BG3430R
Package
SOT363
1=G1* 2=S
Pin Configuration
3=D*
4=D**
5=G2
Marking
6=G1** KNs
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
1
2009-10-01
BG3430R
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1)
1
For
Symbol
V
DS
I
D
±I
G1/2SM
±V
G1/G2S
P
tot
T
stg
T
ch
Symbol
R
thchs
Value
8
25
1
6
200
-55 ... 150
150
Unit
V
mA
V
mW
°C
Value
≤
280
Unit
K/W
calculation of
R
thJA please refer to Application Note Thermal Resistance
2
2009-10-01
BG3430R
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Drain-source breakdown voltage
I
D
= 100 µA,
V
G1S
= 0 V,
V
G2S
= 0 V
Gate1-source breakdown voltage
+I
G1S
= 10 mA,
V
G2S
= 0 V,
V
DS
= 0 V
Gate2-source breakdown voltage
+I
G2S
= 10 mA,
V
G1S
= 0 V,
V
DS
= 0 V
Gate1-source leakage current
V
G1S
= 6 V,
V
G2S
= 0 V
Gate2-source leakage current
V
G2S
= 6 V,
V
G1S
= 0 V,
V
DS
= 0 V
Drain current
V
DS
= 5 V,
V
G1S
= 0 V,
V
G2S
= 4 V
Operating current (selfbiased)
V
DS
= 5 V,
V
G2S
= 4 V, amp.B
Drain-source current
V
DS
= 5 V,
V
G2S
= 4 V,
R
G1
= 100 kΩ,
amp. A
Gate1-source pinch-off voltage
V
DS
= 5 V,
V
G2S
= 4 V,
I
D
= 100 µA
Gate2-source pinch-off voltage
V
DS
= 5 V,
I
D
= 100 µA
V
G2S(p)
-
0.6
-
V
G1S(p)
-
0.5
-
V
I
DSX
-
13
-
I
DSO
-
13
-
mA
I
DSS
-
-
100
µA
+I
G2SS
-
-
50
nA
+I
G1SS
-
-
5
µA
+V
(BR)G1SS
+V
(BR)G2SS
6
6
-
-
15
15
V
(BR)DS
12
-
-
V
typ.
max.
Unit
3
2009-10-01
BG3430R
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
Forward transconductance
Gate1 input capacitance
f
= 10 MHz
Output capacitance
f
= 10 MHz
Power gain
f
= 800 MHz
f
= 45 MHz
Noise figure
f
= 800 MHz
f
= 45 MHz
Gain control range
V
G2S
= 4 ... 0 V ,
f
= 800 MHz
Cross
-
modulation
k=1%, f
w
=50MHz,
f
unw
=60MHz
X
mod
AGC
= 0 dB
AGC
= 10 dB
AGC
= 40 dB
-
90
-
-
-
93
105
-
-
-
∆G
p
F
-
-
45
1.3
1
-
-
-
-
G
p
-
-
25
33
-
-
dB
dB
C
dss
-
1.3
-
g
fs
C
g1ss
-
-
typ.
33
1.9
max.
-
-
mS
pF
Unit
AC Characteristics
V
DS
= 5V,
V
G2S
= 4V, (I
D
= 14 mA) (verified by random sampling)
4
2009-10-01
BG3430R
Functional diagram
a) shows pinning of BG3430R.
G1
B
(RFin
B
)
G2
(AGC)
D
B
(RFout
B
)
Amp. A
Amp. B
bias network partially integrated
bias network fully
integrated
Amp. B
G2
V
GG
Int.
switch
G2
V
gg
= 5 V : Amp. A is ON ; Amp. B is OFF
V
gg
= 0 V : Amp. A is OFF ; Amp. B is ON
S
Amp. A and Amp. B share
G2 and S pins
Amp. A
S
(RFin
A
)
Rg1
G1
A
S
(Ground)
V
GG
(RFout
A
)
D
A
5
2009-10-01
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