D at a S he et , R e v . 2. 2 , N ov e m be r 2 00 7
B G A 4 28
Gain and PCS Low Noise Amplifier
S m a l l S i g n a l D i s c r et e s
Edition 2007-11-06
Published by Infineon Technologies AG,
81726 München, Germany
©
Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
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BGA428
BGA428, Gain and PCS Low Noise Amplifier
Revision History: 2007-11-06, Rev. 2.2
Previous Version: 2002-03-26
Page
9
Subjects (major changes since last revision)
Correction of cross-reference
Trademarks
SIEGET
®
is a registered trademark of Infineon Technologies AG.
Data Sheet
3
Rev. 2.2, 2007-11-06
BGA428
Silicon Germanium Broadband MMIC Amplifier
1
Silicon Germanium Broadband MMIC Amplifier
Feature
• High gain,
G
MA
= 20 dB at 1.8 GHz
• Low noise figure,
NF
= 1.4 dB at 1.8 GHz
• Prematched
• Ideal for GSM, DCS1800, PCS1900
• Open collector output
• Typical supply voltage: 2.4 - 3 V
• SIEGET
®
-45 technology
• Pb-free (RoHS compliant) package
1)
4
5
6
1
2
3
SOT363
1) Pb-containing package may be available upon special request
Figure 1
Description
Pin connection
BGA428 is a high gain, low noise amplifier.
Type
BGA428
Package
SOT363
Marking
PGs
Note:
ESD:
Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
4
Rev. 2.2, 2007-11-06
BGA428
Silicon Germanium Broadband MMIC Amplifier
Maximum Ratings
Table 1
Parameter
Device voltage
Voltage at pin Out
Voltage at pin GS
Current into pin In
Total device current
1)
Input power
2)
Total power dissipation,
T
S
< 125 °C
3)
Junction temperature
Operating temperature range
Storage temperature range
1)
I
tot
= Current into Out + Current into
V
CC
Maximum ratings
Symbol
Limit Value
4
4
3.5
0.5
12
8
50
150
-40... 85
-65... 150
Unit
V
V
V
mA
mA
dBm
mW
°C
°C
°C
V
CC
V
out
V
GS
I
in
I
tot
P
in
P
tot
T
J
T
OP
T
STG
2) Valid for:
a)
Z
L
= 50
Ω,
Z
S
= 50
Ω,
V
CC
= 2.7 V,
V
out
= 2.7 V,
V
GS
= 0.0 V,
GND
= 0.0 V
b)
Z
L
= 50
Ω,
Z
S
= 50
Ω,
V
CC
= 0.0 V,
V
out
= 0.0 V,
V
GS
= 2.7 V,
GND
= 0.0 V
3)
T
S
is measured on the ground lead at the soldering point
Note: All Voltages refer to GND-Node
Thermal resistance
Table 2
Parameter
Thermal resistance
Symbol
Value
Unit
K/W
R
thJS
220
Junction - soldering point
1)
1) For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Data Sheet
5
Rev. 2.2, 2007-11-06
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