D a t a S he et , R e v . 2 . 1 , F e b . 2 00 8
B G A 6 16
S i l i c on G e r m a n i u m B r o a d b a n d M M IC A m pl i f i e r
S m a l l S i g n a l D i s c r et e s
Edition 2008-02-11
Published by Infineon Technologies AG,
81726 München, Germany
©
Infineon Technologies AG 2008.
All Rights Reserved.
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characteristics.
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circuits, descriptions and charts stated herein.
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Due to technical requirements components may contain dangerous substances. For information on the types in
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BGA616
BGA616, Silicon Germanium Broadband MMIC Amplifier
Revision History: 2008-02-11, Rev. 2.1
Previous Version: 2003-04-16
Page
All
5
7-8
All
Subjects (major changes since last revision)
New Chip Version with integrated ESD protection
Electrical Characteristics slightly changed
Figures updated
Document layout change
Trademarks
SIEGET
®
is a registered trademark of Infineon Technologies AG.
Data Sheet
3
Rev. 2.1, 2008-02-11
BGA616
Silicon Germanium Broadband MMIC Amplifier
1
Silicon Germanium Broadband MMIC Amplifier
Feature
• Cascadable 50
Ω-gain
block
• 3 dB-bandwidth: DC to 2.7 GHz with
19.0 dB typical gain at 1.0 GHz
• Compression point
P
-1dB
= 18 dBm at 2.0 GHz
• Noise figure
F
50Ω
= 2.60 dB at 2.0 GHz
• Absolute stable
• 70 GHz
f
T
- Silicon Germanium technology
• 1 kV HBM ESD protection (Pin-to-Pin)
• Pb-free (RoHS compliant) package
1)
3
4
1
2
SOT343
Applications
• Driver amplifier for GSM/PCS/SCDMA/UMTS
• Broadband amplifier for SAT-TV & LNBs
• Broadband amplifier for CATV
1) Pb containing package may be available upon special request
Out, 3
IN, 1
GND, 2,4
Figure 1
Description
The BGA616 is a broadband matched general purpose MMIC amplifier in a Darlington configuration. It is optimized
for a typical supply current of 60 mA.
The BGA616 is based on Infineon Technologies’ B7HF Silicon Germanium technology.
Type
BGA616
Package
SOT343
Marking
BPs
Pin connection
Note:
ESD:
Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
4
Rev. 2.1, 2008-02-11
BGA616
Electrical Characteristics
Maximum Ratings
Table 1
Parameter
Device voltage
Device current
Current into pin In
Input power
1)
Total power dissipation,
T
S
< 78 °C
2)
Junction temperature
Ambient temperature range
Storage temperature range
Maximum ratings
Symbol
Limit Value
4.5
80
0.7
10
360
150
-65... 150
-65... 150
1000
Unit
V
mA
mA
dBm
mW
°C
°C
°C
V
V
D
I
D
I
in
P
in
P
tot
T
J
T
A
T
STG
ESD capability all pins (HBM: JESD22-A114) V
ESD
1) Valid for
Z
S
=
Z
L
= 50
Ω,
V
CC
= 6 V,
R
Bias
= 33
Ω
2)
T
S
is measured on the ground lead at the soldering point
Note: All Voltages refer to GND-Node
Thermal resistance
Table 2
Parameter
Thermal resistance
Symbol
Value
Unit
K/W
Junction - soldering point
1)
R
thJS
200
1) For calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
Electrical Characteristics
Electrical characteristics at
T
A
= 25 °C (measured in test circuit specified in
Figure 2)
V
CC
= 6 V,
R
Bias
= 33
Ω,
Frequency = 2 GHz, unless otherwise specified
Table 3
Parameter
Insertion power gain
Electrical Characteristics
Symbol
Min.
Values
Typ.
20.0
19.0
18.0
Noise figure (
Z
S
= 50
Ω)
Max.
dB
dB
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
Rev. 2.1, 2008-02-11
Unit
Note /
Test Condition
|S
21
|
2
F
50Ω
2.2
2.5
2.6
f
= 0.1 GHz
f
= 1 GHz
f
= 2 GHz
f
= 0.1 GHz
f
= 1 GHz
f
= 2 GHz
Output power at 1 dB gain
compression
Output third order intercept point
Input return loss
Output return loss
Total device current
Data Sheet
P
-1dB
OIP
3
RL
in
RL
out
I
D
5
18
29
15
15
60