D a t a S h e e t , R e v . 1 . 0 , J u n i 2 00 8
BGR420
NPN Silicon RF Transistor With Bias Circuitry
S m a l l S i g n a l D i s c r et e s
Edition 2008-06-06
Published by Infineon Technologies AG,
85579 Neubiberg, Germany
©
Infineon Technologies AG 2008.
All Rights Reserved.
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characteristics.
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circuits, descriptions and charts stated herein.
Information
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BGR420
BGR420, NPN Silicon RF Transistor With Bias Circuitry
Revision History: 2008-06-06, Rev. 1.0
Prevision History: no previous version
Page
Subjects (major changes since last revision)
Trademarks
SIEGET
®
is a registered trademark of Infineon Technologies AG.
Data Sheet
3
Rev. 1.0, 2008-06-06
BGR420
NPN Silicon RF Transistor With Bias Circuitry*
1
NPN Silicon RF Transistor With Bias Circuitry*
Features
• Noise figure
NF
= 1.5 dB at 0.4 GHz
• Gain
S
21
= 26 dB at 0.4 GHz
• On chip bias circuitry, 13 mA bias current at
V
CC
= 3.6 V;
V
BB
= 2.8 V
• SIEGET ® 25 GHz
f
T
-Line
• Pb-free (RoHS compliant) package
* Short term description
3
4
1
2
Applications
• LNAs
2
Description
The BGR420 is a monolithic silicon amplifier with a NPN silicon RF transistor and integrated resistors for biasing.
Type
BGR420
Package
SOT343
Marking
AWs
Note:
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Figure 1
Circuit diagram
Note: Due to design there is an additional diode between emitter and collector, which does not affect normal
operation for common emitter configuration.
Data Sheet
4
Rev. 1.0, 2008-06-06
BGR420
Description
Table 1
Pin
1
2
3
4
Pinning table
Function
RFIN
GND
RFOUT (VCC)
VBB
2.1
Maximum Ratings
Note: All Voltages refer to GND-node
Table 2
Parameter
Current at pin VCC
Voltage at pin VCC
Current at pin VBB
Voltage at pin VBB
Current at pin RFIN
Voltage at pin RFIN
Total power dissipation
1)
T
S
= 115 °C
Operation junction temperature range
Maximum ratings
Symbol
Value
25
13
2.2
8
3
5
120
-65... 150
Unit
mA
V
mA
V
mA
V
mW
°C
°C
I
CC
V
CC
I
BB
V
BB
I
IN
V
IN
P
tot
T
jo
T
jstg
Storage junction temperature range
-65... 150
1)
T
S
is measured on the emitter (GND) lead at the soldering point to the pcb
Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions even only for a short moment may affect device reliability. Maximum
ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the
integrated circuit. Absolute maximum ratings typically differ heavily from recommended operation conditions
2.2
Thermal Resistance
Table 3
Parameter
Thermal Resistance
Symbol
Value
Unit
K/W
Junction - soldering point
1)
R
thJS
≤
290
1) For calculation of
R
thJA
please refer to Application Note Thermal Resistance.
Data Sheet
5
Rev. 1.0, 2008-06-06
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